Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ken Kosai"'
Autor:
John E. Jensen, Terry De Lyon, Sanghamitra Sen, Bill Johnson, Bonnie A. Baumgratz, Rajesh D. Rajavel, M. D. Jack, George R. Chapman, Ken Kosai, B. Walker, Owen K. Wu
Publikováno v:
Journal of Electronic Materials. 26:488-492
HgCdTe is an attractive material for room-temperature avalanche photodetectors (APDs) operated at 1.3–1.6 µm wavelengths for fiber optical communication applications because of its bandgap tunability and the resonant enhancement of hole impact ion
Autor:
E. A. Patten, Elyse Norton, Valerie Randall, Scott M. Johnson, John A. Roth, Ken Kosai, M. D. Newton, L. T. Pham, John E. Jensen, W. A. Radford, Paul Goetz, Gregory K. Pierce, Stefan T. Baur, Randolph E. Longshore, Edward P. Smith, Brett Z. Nosho, Raymond A. Coussa, John Edwards, G. M. Venzor
Publikováno v:
SPIE Proceedings.
Raytheon Vision Systems (RVS) in collaboration with HRL Laboratories is contributing to the maturation and manufacturing readiness of third-generation two-color HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from th
Autor:
Aaron R. Hawkins, Michael S. Johnson, M. D. Jack, Ken Kosai, George R. Chapman, Carleton S. Clauss, Joshua L. Beutler
Publikováno v:
Journal of Applied Physics. 101:023117
A study of the frequency response of solid-state impact ionization multipliers (SIMs) is presented that emphasizes the role of resistive and capacitive elements of the device to establish response limitations. SIMs are designed to amplify input curre