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Structural and electrical characterisation of ion-implanted strained silicon

Autor: Ken Horan, Nick E. B. Cowern, T. Tuomi, Nick Bennett, B.J. Sealy, Aapo Lankinen, L. O’Reilly, Patrick J. McNally

Publikováno v: Materials science and engineering / B 154-155, 118-121 (2008). doi:10.1016/j.mseb.2008.09.007
Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121 , Sealy, B.J., Cowern, N.E.B. and Tuomi, Tiinamaija (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-15 . pp. 118-121. ISSN 0921-5107

The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS devices [H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08143f850298c090bc26b2d90e6c2fd2
https://doi.org/10.1016/j.mseb.2008.09.007

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Constraints on micro-Raman strain metrology for highly doped strained Si materials

Autor: Ken Horan, L. O’Reilly, Nick Bennett, Russell M. Gwilliam, T.C.Q. Noakes, B.J. Sealy, Patrick J. McNally, Aapo Lankinen, P. Bailey, Nick E. B. Cowern

Ultra-violet (UV), low penetration depth, micro-Raman spectroscopy and high resolution X-ray diffraction (HRXRD) are utilised as complementary, independent stress characterisation tools for a range of strained Si samples doped by low energy (2 keV) S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8d6cef6dc504c6364aca33802bb53fd
https://surrey.eprints-hosting.org/260/