Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Ken Hattori"'
Autor:
Azusa N. Hattori, Ai I. Osaka, Ken Hattori, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, Hidekazu Tanaka
Publikováno v:
Crystals, Vol 10, Iss 8, p 631 (2020)
Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitud
Externí odkaz:
https://doaj.org/article/f72ae521a15644efb950fdbda04490ba
Autor:
Umar Sidik, Azusa N. Hattori, Ken Hattori, Musa Alaydrus, Ikutaro Hamada, Liliany N. Pamasi, Hidekazu Tanaka
Publikováno v:
ACS Applied Electronic Materials. 4:4849-4856
Autor:
Ken Hattori, Yuya Sakai, Liliany N. Pamasi, Aydar Irmikimov, Takaaki Higashi, HaoBang Yang, XiaoQian Shi, FangZhun Guo, Ai I. Osaka, Hidekazu Tanaka, Takushi Iimori, Fumio Komori, Azusa N. Hattori
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 20(4):214-220
The creation of three-dimensional (3D) geometrical shapes with atomically ordered surfaces and the investigation of their physical properties are major steps contributing to the development of a new paradigm in surface science. We produced a 3D-patte
Autor:
Ken Hattori, Azusa N. Hattori, Xiaoqian Shi, Daisetsu Toh, Ai I. Osaka, Kazuto Yamauchi, Hidekazu Tanaka, Fangzhun Guo
Publikováno v:
ACS Applied Nano Materials. 4:12091-12097
Autor:
Sohei Nakatsuka, Taishi Imaizumi, Ken Hattori, Tadashi Abukawa, Azusa N. Hattori, Hidekazu Tanaka
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 19:13-19
Spatially arranged surfaces on the micro-rod structure, which was three-dimensionally (3D) architected on a Si(110) substrate have been thoroughly investigated by a system with micro-beam reflection high-energy electron diffraction (μ-RHEED) and sca
Autor:
Ken Hattori, Aydar Irmikimov, Liliany Noviyanty Pamasi, Shunta Takahashi, Xiaoqian Shi, Emilia E. Hashamova, Ai I. Osaka, Nobuyoshi Hosoito, Hidekazu Tanaka, Fangzhun Guo, Takaaki Higashi, Azusa N. Hattori
Publikováno v:
Crystal Growth & Design. 21:946-953
The control of three-dimensional (3D) geometrical shapes is one of important approaches that contribute the development of new functionalities in material science. We produced 3D Si pyramids with a...
Autor:
Shohei Takemoto, Hidekazu Tanaka, Ken Hattori, Liliany Noviyanty Pamasi, Hiroshi Daimon, Azusa N. Hattori, Kazunori Sato, Takashi Yamanaka
Publikováno v:
ACS Applied Electronic Materials. 1:2678-2683
Neodymium nickelate (NdNiO3: NNO), which is a typical strongly correlated metal oxide, has attracted considerable attention because of its large resistance changes due to its metal-insulator transi...
Publikováno v:
Vacuum and Surface Science. 62:427-432
Autor:
Kosuke Kurushima, Azusa N. Hattori, Ken Hattori, Hiroshi Daimon, Hidekazu Tanaka, Yuji Otsuka, Masaaki Someta, Shohei Takemoto
Publikováno v:
Journal of Applied Crystallography. 52:732-744
New fitting analyses for peak shapes in a 2D reciprocal-space map are demonstrated to evaluate the strain, strain distribution and domain size of a crystalline ultra-thin (15 Å) film of β-FeSi2(100) grown epitaxially on an Si(001) substrate, using
Autor:
Hidekazu Tanaka, Xin Liang Tan, Ken Hattori, Mahito Yamamoto, Azusa N. Hattori, Hiroshi Daimon, Daiki Kawamoto
Publikováno v:
ACS Applied Electronic Materials. 1:82-87
The resistance modulation under various gate voltage (Vg) application conditions was systematically studied for a chemical field effect transistor (FET) composed of a SmNiO3 (SNO) film channel and ...