Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ken Brennan"'
Autor:
Gregory B. Shinn, Robert H. Havemann, Ken Brennan, Kelly J. Taylor, Girish A. Dixit, Anthony J. Konecni, Mi-Chang Chang, Abha Singh, Charles K. Lee, Wei-Yung Hsu
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
Low temperature aluminum plug fill schemes such as CVD Al and high pressure ForceFill/sup TM/ Al offer significant advantages in terms of lower via resistance and compatibility with low-k polymer dielectrics. The low processing temperature is desirab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e7530e3b07e077a9261a6e13008c94
https://doi.org/10.1109/vlsit.1996.507803
https://doi.org/10.1109/vlsit.1996.507803
Publikováno v:
SPIE Proceedings.
Decreasing critical dimensions and pitch at metal and hole levels requires the use of Deep-UV processing. Associated with this processing are issues of resist-substrate interactions, small process margins, and increasing aspect ratios forcing the mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cafe5627abc3a57100cd8b433f7540e6
https://doi.org/10.1117/12.275976
https://doi.org/10.1117/12.275976
Publikováno v:
SPIE Proceedings.
Implementation of DUV (248 nm) into 0.25 micrometers production requires an understanding of the associated process complexity. With DUV resists, this encompasses addressing issues of profile integrity on various substrates, etch resistance, and adeq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2ab360c169211c0a4dc72750a12e75
https://doi.org/10.1117/12.240905
https://doi.org/10.1117/12.240905
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.