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pro vyhledávání: '"Kelvin Walch"'
Autor:
Geert Vandenberghe, A. Meyyappan, Sylvain Muckenhirn, Kelvin Walch, Mark John Maslow, Johannes van Wingerden
Publikováno v:
SPIE Proceedings.
As dimensions get smaller and circuits get more complex, the demand for comprehensive measurements of reticule geometries increases. 3D characterization of phase shift mask (PSM) is required to understand the quality of the transferred image. To avoi
Publikováno v:
SPIE Proceedings.
Decreasing dimensions of features in semiconductor device manufacturing makes it imperative to control the sidewall, line and line-edge roughness. The roughness contributes to the variation in critical dimension (CD) and it might affect device functi