Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Kelvin F. Poole"'
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1066-1071
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1072-1078
Autor:
Glenn Teeter, Matthew Young, Fan Wu, Jagdish Narayan, Nishant Gupta, Dino Sulejmanovic, Kelvin F. Poole, Shiou-Jyh Hwu, Rajendra Singh, Harin S. Ullal, Colin D. McMillen, G. F. Alapatt
Publikováno v:
Journal of Materials Research. 28:1740-1746
Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD
Autor:
P.J. McNulty, Kelvin F. Poole
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1113-1116
UVPROM devices programmed as dosimeters exhibit a linear dependence on the temperature maintained during the read operation. Raising the temperature lowers the absorbed dose per bit flip. This exposes latent measurements of lower absorbed doses, thus
Publikováno v:
Advances in OptoElectronics, Vol 2012 (2012)
Many methods to improve the solar cell’s efficiency beyond current generation of bulk and thin film of photovoltaic (PV) devices have been reported during the last five decades. Concepts such as multiple exciton generations (MEG), carrier multiplic
Publikováno v:
International Journal of Photoenergy, Vol 2009 (2009)
We present a comprehensive review on prospects for one-, two-, or three-dimensional nanostructure-based solar cells for manufacturing the future generation of photovoltaic (PV) modules. Reducing heat dissipation and utilizing the unabsorbed part of t
Autor:
N. Rajaram, P.J. McNulty, M. Alkhafazi, K.R. Freeman, L.Z. Scheick, Kelvin F. Poole, J.P. Dyar, M.G. Randall
Publikováno v:
IEEE Transactions on Nuclear Science. 53:1859-1862
A simplified procedure for measuring the absorbed dose using floating-gate transistors is presented and demonstrated on 64 K UVPROMs. Reading the dosimeter involves a standard electrical readout at 5 V, generates shifts in the response curve that are
Publikováno v:
ECS Transactions. 1:705-716
The implications of a modern model of the Poole-Frenkel (PF) effect on the characterization of high-k dielectric leakage are investigated. The classical PF model predicts a characteristic graph known as the PF plot which is linear for all fields, and
Autor:
Michael Fennell, L. Call, R. Perez, D. Stroebel, A. Paccagnella, J. Reneau, M. Crisler, Kelvin F. Poole, M.G. Randall, G. Cellere, P.J. McNulty
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2597-2601
The dynamic range and resolution of dosimeters based on floating-gate transistors with electronic readout can be significantly improved by simple changes in the readout process and an increase in the number of memory cells used. The new procedure is
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:55-62
We show that UV/VUV-enhanced rapid thermal processing (RTP) in combination with single-wafer processing using a single tool for the fabrication of metal gate/high-/spl kappa/ dielectric gate stacks not only improves overall device performance, but al