Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Kelson D. Chabak"'
Autor:
Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert, Devin T. Davis, Ahmad E. Islam, Dennis Walker, Gary Hughes, Kyle Liddy, Kelson D. Chabak
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 531-538 (2023)
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Sever
Externí odkaz:
https://doaj.org/article/5652d6efb28e435ba8a596cb3791a18a
Autor:
Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan C. Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak
Publikováno v:
APL Materials, Vol 9, Iss 10, Pp 101105-101105-8 (2021)
Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s
Externí odkaz:
https://doaj.org/article/fff04251cec24e788445f8f34248763d
Autor:
Kevin D. Leedy, Kelson D. Chabak, Vladimir Vasilyev, David C. Look, Krishnamurthy Mahalingam, Jeff L. Brown, Andrew J. Green, Cynthia T. Bowers, Antonio Crespo, Darren B. Thomson, Gregg H. Jessen
Publikováno v:
APL Materials, Vol 6, Iss 10, Pp 101102-101102-10 (2018)
Carrier concentration control by impurity dopants in epitaxial Ga2O3 thin films is progressing to deliver high mobility films for device structures. Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on (010) β-Ga2O3 substrates fro
Externí odkaz:
https://doaj.org/article/b362cdacd5f94af6b5637f33980d9544
Autor:
Samuel H. Kim, Daniel Shoemaker, Andrew J. Green, Kelson D. Chabak, Kyle J. Liddy, Samuel Graham, Sukwon Choi
Publikováno v:
IEEE Transactions on Electron Devices. 70:1628-1635
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304a68157662cf8953a5f44f15fcf44e
https://doi.org/10.1109/ted.2023.3244134
https://doi.org/10.1109/ted.2023.3244134
Autor:
Nicholas C. Miller, Matt Grupen, Ahmad E. Islam, John D. Albrecht, Dave Frey, Richard Young, Miles Lindquist, Andrew J. Green, Dennis E. Walker, Kelson D. Chabak
Publikováno v:
IEEE Transactions on Electron Devices. 70:435-442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca50b2459d44800c843f52fd9879278
https://doi.org/10.1109/ted.2022.3229291
https://doi.org/10.1109/ted.2022.3229291
Autor:
Ahmad Ehteshamul Islam, Chenyu Zhang, Kursti DeLello, David A. Muller, Kevin D. Leedy, Sabyasachi Ganguli, Neil A. Moser, Rachel Kahler, Jeremiah C. Williams, Daniel M. Dryden, Stephen Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak
Publikováno v:
IEEE Transactions on Electron Devices. 69:5656-5663
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3773ab114cf255ec8348387986ba3570
https://doi.org/10.1109/ted.2022.3200643
https://doi.org/10.1109/ted.2022.3200643
Autor:
Daniel M. Dryden, Kyle J. Liddy, Ahmad E. Islam, Jeremiah C. Williams, Dennis E. Walker, Nolan S. Hendricks, Neil A. Moser, Andrea Arias-Purdue, Nicholas P. Sepelak, Kursti DeLello, Kelson D. Chabak, Andrew J. Green
Publikováno v:
IEEE Electron Device Letters. 43:1307-1310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e658ec10fcf887ddd44eb5660cc47b01
https://doi.org/10.1109/led.2022.3182575
https://doi.org/10.1109/led.2022.3182575
Autor:
Samuel H. Kim, Daniel Shoemaker, Bikramjit Chatterjee, Andrew J. Green, Kelson D. Chabak, Eric R. Heller, Kyle J. Liddy, Gregg H. Jessen, Samuel Graham, Sukwon Choi
Publikováno v:
IEEE Transactions on Electron Devices. 69:1251-1257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a3278a75334049e6ca589aa00b73cb
https://doi.org/10.1109/ted.2022.3143779
https://doi.org/10.1109/ted.2022.3143779
Autor:
Andrea Arias-Purdue, Vivek Mehrotra, Charles Neft, Kelson D. Chabak, Andrew J. Green, Kyle J. Liddy, Keisuke Shinohara, Miguel E. Urteaga
Publikováno v:
Ultrawide Bandgap β-Ga2O3 Semiconductor ISBN: 9780735425033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9854df070a940ec689e9dd2c06be1db8
https://doi.org/10.1063/9780735425033_013
https://doi.org/10.1063/9780735425033_013
Autor:
Nicholas P. Sepelak, Jeremiah Williams, Daniel M. Dryden, Rachel Kahler, Kyle J. Liddy, Weisong Wang, Kelson D. Chabak, Andrew J. Green, Ahmad E. Islam
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be71ac51176999cc3c242916888a5177
https://doi.org/10.1109/csw55288.2022.9930389
https://doi.org/10.1109/csw55288.2022.9930389