Výsledky vyhledávání - "Kelson, Chabak"

Akademický článek

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Publikováno v: APL Materials, Vol 11, Iss 4, Pp 041102-041102-12 (2023)

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular bea

Externí odkaz: https://doaj.org/article/5c8dd87e738d470789d55d5159c1238e

Zobrazit plný text záznamu

Akademický článek

β-Gallium oxide power electronics

Publikováno v: APL Materials, Vol 10, Iss 2, Pp 029201-029201-40 (2022)

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the

Externí odkaz: https://doaj.org/article/9d1645270b09406faae49f6d096839f2

Zobrazit plný text záznamu

Investigating Gate Interface Traps in β-Ga2O3 Field Effect Transistors (MOSFETs) By Using the Transfer Length Method (TLM) and UV Exposure

Autor: Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Curt Richter, Kin Cheung, Sujitra Pookpanratana, Qiliang Li

Publikováno v: ECS Meeting Abstracts. :2363-2363

Beta-gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor for high power electronic applications due to its high theoretical critical field of 8 MV/cm, and Baliga figure of merit (BFOM) of ~3300, 3 – 10 times larger than current

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75bab1b45629c9705e09ad0ba82813cd
https://doi.org/10.1149/ma2022-02642363mtgabs

Zobrazit plný text záznamu

β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Autor: Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li

Publikováno v: Applied Physics Letters. 121:052102

In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewall

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49989c36940d4e40c0bb0fc27c865158
https://doi.org/10.1063/5.0096490

Zobrazit plný text záznamu