Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kelsey J. Mirrielees"'
Publikováno v:
The Journal of Physical Chemistry Letters. 13:8380-8385
Halogen dopants in ZnSe have been a research focus for quantum applications utilizing excitonic emissions, wherein point defects play a critical role. To provide a full first-principles perspective on the defect chemistries of halogen-doped ZnSe, Cl-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0174666809fa5e20a8c517893b6ea0ea
https://doi.org/10.1021/acs.jpclett.2c01976
https://doi.org/10.1021/acs.jpclett.2c01976
Publikováno v:
Applied Physics Letters. 120:232102
Aiming at a fundamental understanding of the defect chemistry of pure ZnSe for optical and quantum applications, systematic density functional theory calculations with hybrid exchange-correlation functionals were performed to build an accurate databa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9ca2d46aa9417ce499da5e535a63b0
https://doi.org/10.1063/5.0092736
https://doi.org/10.1063/5.0092736
Autor:
Ramon Collazo, Jonathon N. Baker, James M. LeBeau, J. Houston Dycus, Douglas L. Irving, Zlatko Sitar, Pramod Reddy, Kelsey J. Mirrielees
Publikováno v:
Journal of Applied Physics. 129:195304
Properties of AlN/GaN surfaces are important for realizing the tunability of devices, as the presence of surface states contributes to Fermi level pinning. This pinning can influence the performance of high electron mobility transistors and is also i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fd4367444465ae5002d6db5cf995f38
https://doi.org/10.1063/5.0048820
https://doi.org/10.1063/5.0048820
Publikováno v:
The Journal of Chemical Physics. 154:094705
Despite their technological importance, studying the properties of alloys with first principles methods remains challenging. In cases of AlxGa1-xN and BaxSrx-1TiO3 (BST), whose most important properties are governed by point defects, explicit simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::596641d1dbab42727743f8fbbc3332d8
https://doi.org/10.1063/5.0041127
https://doi.org/10.1063/5.0041127
Autor:
M. Hayden Breckenridge, Jonathon N. Baker, Douglas L. Irving, Kelsey J. Mirrielees, Shun Washiyama, Qiang Guo, Ramon Collazo, Ji Hyun Kim, Pegah Bagheri, Andrew Klump, Zlatko Sitar, Pramod Reddy, Yan Guan, Ronny Kirste, Seiji Mita
Publikováno v:
Applied Physics Letters. 118:042102
Self-compensation in Ge- and Si-doped Al0.3Ga0.7N has been investigated in terms of the formation of III vacancy and donor-vacancy complexes. Both Ge- and Si-doped AlGaN layers showed a compensation knee behavior with impurity compensation (low dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b098ed9acf38aeecef0404dff6ab96e6
https://doi.org/10.1063/5.0035957
https://doi.org/10.1063/5.0035957
Autor:
Douglas L. Irving, Kelsey J. Mirrielees, James M. LeBeau, J. Houston Dycus, Seiji Mita, Everett D. Grimley, Zlatko Sitar, Ramon Collazo, Ronny Kirste
Publikováno v:
ACS applied materialsinterfaces. 10(13)
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure is often elusive through the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6db3210c34f0784d2aa281cff48007b
https://pubmed.ncbi.nlm.nih.gov/29558103
https://pubmed.ncbi.nlm.nih.gov/29558103
Autor:
Douglas L. Irving, Joshua S. Harris, Zachary Bryan, Kelsey J. Mirrielees, Isaac Bryan, Benjamin E. Gaddy, Jonathon N. Baker, Zlatko Sitar, Pramod Reddy, Ramon Collazo
Publikováno v:
Applied Physics Letters. 112:152101
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40ea3c0ef2b41c5b510150ee73418581
https://doi.org/10.1063/1.5022794
https://doi.org/10.1063/1.5022794