Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kelotchi S. Figueroa"'
Autor:
Kelotchi S. Figueroa, Natalya A. Zimbovskaya, Nicholas J. Pinto, Chengyu Wen, A. T. Charlie Johnson
Publikováno v:
AIP Advances, Vol 12, Iss 7, Pp 075008-075008-8 (2022)
Charge transport in ferroelectric (FE) gated graphene far from the Dirac point (DP) was studied in the temperature range 300 K < T < 350 K. A non-monotonic/monotonic/non-monotonic behavior in the conductivity [σ(T)] was observed as one moved away fr
Externí odkaz:
https://doaj.org/article/0c0e831086534c7b969c374b6ebf862f
Autor:
Kelotchi S. Figueroa, Natalya A. Zimbovskaya, Nicholas J. Pinto, Chengyu Wen, A. T. Charlie Johnson
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085015-085015-9 (2021)
Charge transport near the Dirac point (DP) was investigated in graphene using ferroelectric (FE) gating in the temperature range of 300 < T < 350 K. We observed that the conductivity (σ) near the DP had a positive temperature gradient that switched
Externí odkaz:
https://doaj.org/article/4a4fa62640f74fcab034a5b6ab3ef061
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125225-125225-6 (2020)
Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically
Externí odkaz:
https://doaj.org/article/c680e340ea70400f8dc10d54a681796f
Autor:
Zhang Qicheng, Christopher E. Kehayias, A. T. Charlie Johnson, Nicholas J. Pinto, Alejandro J. Cruz-Arzon, Suh Yeonjoon, Kelotchi S. Figueroa
Publikováno v:
Synthetic Metals. 283:116967
Semiconducting p-doped single walled carbon nanotubes (SWCNT) were deposited at the edge of a cleaved n-Si/SiO2 wafer. The p-n junction formed at the SWCNT/n-Si interface was tested in the presence of UV irradiation, and an immediate decrease was obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ab1c2428c8f2f038351b74f1011454
https://doi.org/10.1016/j.synthmet.2021.116967
https://doi.org/10.1016/j.synthmet.2021.116967
Autor:
A. T. Charlie Johnson, Nicholas J. Pinto, Chengyu Wen, Kelotchi S. Figueroa, Natalya A. Zimbovskaya
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085015-085015-9 (2021)
Charge transport near the Dirac point (DP) was investigated in graphene using ferroelectric (FE) gating in the temperature range of 300 < T < 350 K. We observed that the conductivity (σ) near the DP had a positive temperature gradient that switched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f98363e98e02cf46428fcb29a80d05bd
https://doaj.org/article/4a4fa62640f74fcab034a5b6ab3ef061
https://doaj.org/article/4a4fa62640f74fcab034a5b6ab3ef061
Autor:
Meng-Qiang Zhao, Kelotchi S. Figueroa, Jose L. Pérez, Nicholas J. Pinto, Idalia Ramos, A. T. Charlie Johnson, Ahmad Matar
Publikováno v:
SN Applied Sciences. 1
A chemical vapor-deposited monolayer MoS2 crystal was crossed with an electro-spun PEDOT-PSS nano-ribbon under ambient conditions. The current–voltage (I–V) curve measured across the hetero-junction was nonlinear and asymmetric, similar to a diod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::365904bf99f3a006ea084cfd8cb297f5
https://doi.org/10.1007/s42452-019-0595-0
https://doi.org/10.1007/s42452-019-0595-0
Autor:
Natalia Acero, Eric A. Stach, Pawan Kumar, Deep Jariwala, Kelotchi S. Figueroa, Alexandre C. Foucher, Kiyoung Jo
Publikováno v:
Journal of Vacuum Science & Technology A. 39:032201
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73dd41f5fe9108106e848870709e8e2
https://doi.org/10.1116/6.0000874
https://doi.org/10.1116/6.0000874
Autor:
Anamaris Melendez, Nicholas J. Pinto, Luis M. Rijos, Angelo Porcu, Naomi M. Rivera, Kelotchi S. Figueroa, Idalia Ramos
Publikováno v:
Journal of Applied Polymer Science. 138:50361
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc23a3d27f4750144ec9371d7f8b426e
https://doi.org/10.1002/app.50361
https://doi.org/10.1002/app.50361
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125225-125225-6 (2020)
Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13bf4d70d4a73fb44ec1f620d780214c
https://doaj.org/article/c680e340ea70400f8dc10d54a681796f
https://doaj.org/article/c680e340ea70400f8dc10d54a681796f
Autor:
Kelotchi S. Figueroa, Nicholas J. Pinto, Chengyu Wen, Marija Drndic, A. T. Charlie Johnson, Srinivas V. Mandyam, Zhaoli Gao, Meng-Qiang Zhao, Paul Masih Das
Publikováno v:
Journal of Applied Physics. 127:125503
A simple technique of doping graphene by manipulating adsorbed impurity charges is presented. Using a field effect transistor configuration, controlled polarization of a ferroelectric polymer gate is used to compensate and neutralize charges of one t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b077a3ce48bed9cf47bdba1bd89fd400
https://doi.org/10.1063/5.0003099
https://doi.org/10.1063/5.0003099