Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Keith Tate"'
Autor:
Ajay Upadhyaya, Han Xu, Keith Tate, Srinivas Devayajanam, Teh Y. Tan, Prakash Basnyat, Ajeet Rohatgi, Bhushan Sopori
Publikováno v:
IEEE Journal of Photovoltaics. 7:97-103
We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-type, Czochralski wafers can be dissolved using a flash-annealing process, yielding very high quality wafers for high-efficiency solar cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8998f7476e7a6a6818067655542b79fb
https://doi.org/10.1109/jphotov.2016.2621345
https://doi.org/10.1109/jphotov.2016.2621345
Autor:
Keeya Madani, Atul Gupta, Ajay Upadhyaya, Young-Woo Ok, Vinodh Chandrasekaran, Vijaykumar Upadhyaya, Ajeet Rohatgi, Brian Rounsaville, Chel-Jong Choi, Elizabeth Chang, Vijay Yelundur, Keith Tate
Publikováno v:
IEEE Journal of Photovoltaics. 6:153-158
This paper shows the results and the limitations of a 21% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a76b7f82808d7a6c150d2690834a888
https://doi.org/10.1109/jphotov.2015.2496861
https://doi.org/10.1109/jphotov.2015.2496861
Autor:
John Keith Tate, Young-Woo Ok, Vijay Upadhyaya, Aditi Jain, Ajeet Rohatgi, James Hwang, Eunhwan Cho
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Field effect passivation by negative charge is important for back surface of p-type PERC and front surface of n-type PERT with boron emitter. Currently, Al 2 O 3 passivation is widely used for both surfaces due to its negative charge. However, Al 2 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a27bcd84121f62ae1df18f1c97ffed
https://doi.org/10.1109/pvsc.2017.8366701
https://doi.org/10.1109/pvsc.2017.8366701
Publikováno v:
ECS Transactions. 60:1273-1278
We have tailored phosphorus (P) emitter profiles via POCl3 diffusion to create solar cell emitters displaying low saturation current density (J0e ) in order to study the conditions necessary for high cell performance. Theoretical emitter modeling sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3a92a6535008a1a1f2a31e3d41d4809
https://doi.org/10.1149/06001.1273ecst
https://doi.org/10.1149/06001.1273ecst
Autor:
I.B. Cooper, A.F. Carroll, Ajeet Rohatgi, Robert C. Reedy, John Renshaw, Kurt R. Mikeska, Keith Tate
Publikováno v:
IEEE Journal of Photovoltaics. 4:134-141
Screen-printed thick-film Ag metallization has become highly successful in crystalline Si (c-Si) photovoltaics. However, a complete understanding of the mechanism resulting in low resistance contact is still lacking. In order to shed light on this me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa39c6387d25742ef1482e46ef2844b0
https://doi.org/10.1109/jphotov.2013.2285621
https://doi.org/10.1109/jphotov.2013.2285621
Autor:
Moon Hee Kang, John Keith Tate, Chia-Wei Chen, J. C. Keane, Vijaykumar Upadhyaya, A. Kapoor, Ajeet Rohatgi, Steven Ning
Publikováno v:
IEEE Journal of Photovoltaics. 3:944-951
This paper reports on a methodology to achieve low-cost high-efficiency screen-printed low-to-medium concentrator Si cells and validates it by fabricating some of the highest efficiency metal paste printed cells with a simple cell design. The model s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af3ec2ed159f7883aceec7769748b53
https://doi.org/10.1109/jphotov.2013.2253832
https://doi.org/10.1109/jphotov.2013.2253832
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Current-generation screen-printed (SP) Ag pastes have shown capability to contact lightly doped Si solar cell emitters displaying low saturation current density (J 0e ) with high fill factor (FF). However, we have observed that higher firing temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf37ce0d51971564e7e8cbc787e5e23b
https://doi.org/10.1109/pvsc.2016.7750181
https://doi.org/10.1109/pvsc.2016.7750181
Field-effect passivation by charge injection into SiNx using a novel low-cost plasma charging method
Autor:
Ajay Upadhyaya, John Keith Tate, Francesco Zimbardi, James Hwang, Young-Woo Ok, Eunhwan Cho, Ajeet Rohatgi
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Al 2 O 3 film with SiNx capping layer is widely used for rear side passivation of p-type PERC cells and passivation of p+ emitter in n-PERT cells because of very effective field-induced passivation by high density of negative charge in Al 2 O 3 (5e12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59bf88e566d4bacd2429cf587ef8ce0b
https://doi.org/10.1109/pvsc.2016.7750180
https://doi.org/10.1109/pvsc.2016.7750180
Autor:
Chia-Wei Chen, Abasifreke Ebong, Ajeet Rohatgi, M. Finot, Francesco Zimbardi, John Renshaw, Keith Tate
Publikováno v:
IEEE Journal of Photovoltaics. 1:231-235
Concentrator cells have the potential to reduce the usage of semiconductor material while producing high efficiency and more power density in a cell. Silicon solar cells now provide a unique opportunity for low-cost concentrator systems that are suit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8b74b8041d2295b73af1440c3f560e
https://doi.org/10.1109/jphotov.2011.2172776
https://doi.org/10.1109/jphotov.2011.2172776
Autor:
Chia-Wei Chen, Vijaykumar Upadhyaya, Ajeet Rohatgi, Keith Tate, Arnab Das, Ajay Upadhyaya, S. Ramanathan, A. Kapoor, Jiun-Hong Lai
Publikováno v:
IEEE Journal of Photovoltaics. 1:16-21
This paper describes the cell design and technology on large-area (239 cm2) commercial grade Czochralski Si wafers using industrially feasible oxide/nitride rear passivation and screen-printed local back contacts. A combination of optimized front and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1119bfa0ab9085a7fd63aef9c944cb95
https://doi.org/10.1109/jphotov.2011.2163151
https://doi.org/10.1109/jphotov.2011.2163151