Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Keith Standiford"'
Autor:
Christian Bürgel, Kushlendra Mishra, Gek Soon Chua, Peter Buck, Ingo Bork, Sankaranarayanan Paninjath, Keith Standiford
Publikováno v:
SPIE Proceedings.
Shrinking feature sizes and the need for tighter CD (Critical Dimension) control require the introduction of new technologies in mask making processes. One of those methods is the dose assignment of individual shots on VSB (Variable Shaped Beam) mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e53c2ada5f31d854ef8e33d9ba622f5
https://doi.org/10.1117/12.2069617
https://doi.org/10.1117/12.2069617
Publikováno v:
SPIE Proceedings.
In this paper we discuss the EUV OPC modeling challenges and potential solutions, as well as OPC integration requirements to support the forthcoming application of EUV lithography. 10-nm-node OPC modeling is considered as an example. Wafer and mask p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a492bacdb8c5508b7b0ee909a920433
https://doi.org/10.1117/12.2046341
https://doi.org/10.1117/12.2046341
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b1e2a2c913d978aa6f6e2830b9b301
https://doi.org/10.1117/2.1201312.005199
https://doi.org/10.1117/2.1201312.005199
Autor:
Keith Standiford, Christian Bürgel
Publikováno v:
SPIE Proceedings.
When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a322281163e2ac8a05e892881464c234
https://doi.org/10.1117/12.2023109
https://doi.org/10.1117/12.2023109
Publikováno v:
SPIE Proceedings.
The 50keV ebeam exposure of EUV blanks leads to additional electron backscattering from the tantalum layer and the mirror portion of the blank substrate that cannot be adequately corrected by in-tool algorithms. Coupling this additional backscatter w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f87637e8edd5f2a73cdc67cd25b7ac50
https://doi.org/10.1117/12.2023093
https://doi.org/10.1117/12.2023093
Autor:
Tamer Coskun, Gek Soon Chua, Keith Standiford, Ralph Schlief, Chris Clifford, Craig Higgins, Yi Zou, Germain Fenger
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6841d9b21b0e72136c5adea3fb664282
https://doi.org/10.1117/12.2009281
https://doi.org/10.1117/12.2009281
Publikováno v:
SPIE Proceedings.
When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for electron backscattering from the mirror and tantalum (Ta) based absorber layers. Current ebeam systems cannot co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf2ac4508903e955c9c4b0263b7b7288
https://doi.org/10.1117/12.965225
https://doi.org/10.1117/12.965225
Autor:
Harry J. Levinson, Craig Higgins, Hui Peng Koh, Pawitter Mangat, Keith Standiford, Jeffrey A. Schefske, Mandeep Singh, Ralph Schlief, Thomas I. Wallow, Fan Jiang, Chris Clifford, Yi Zou, Sudhar Raghunathan, Azat Latypov, Deniz E. Civay, Lei Sun, Obert Wood, Oleg Kritsun
Publikováno v:
SPIE Proceedings.
Although the k1 factor is large for extreme ultraviolet (EUV) lithography compared to deep ultraviolet (DUV) lithography, OPC is still needed to print the intended patterns on the wafer. This is primarily because of new non-idealities, related to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58dd5a8d52cb636a5bf8c29e9ed84537
https://doi.org/10.1117/12.916171
https://doi.org/10.1117/12.916171
Autor:
Anthony Cheung, Marek Zywno, Henry Percy, Christopher F. Bevis, Mark A. McCord, Keith Standiford, Paul Petric, Alan D. Brodie, Luca Grella, Allen Carroll
Publikováno v:
Alternative Lithographic Technologies.
REBL (Reflective Electron Beam Lithography) is being developed for high throughput electron beam direct write maskless lithography. The system is specifically targeting 5 to 7 wafer levels per hour throughput on average at the 45 nm node, with extend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5510dbc7bbf14b699000eacaa632f6
https://doi.org/10.1117/12.817319
https://doi.org/10.1117/12.817319
Autor:
Henry Percy, Keith Standiford, Noah Bareket, Christopher F. Bevis, Paul Petric, Luca Grella, Allen Carroll, Alan D. Brodie, Marek Zywno
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:161
The system concepts used in a novel approach for a high throughput maskless lithography system called reflective electron beam lithography (REBL) are described. The system is specifically targeting five to seven wafer levels per hour throughput on av
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbc9be22e05861a664057686b0e12cf
https://doi.org/10.1116/1.3054281
https://doi.org/10.1116/1.3054281