Výsledky vyhledávání - "Keith R. Evans"

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Autor: Lisa M. Porter, Keith R. Evans, R. J. Kamaladasa, Robert F. Davis, Edward A. Preble, Yoosuf N. Picard, Li Huang, Fang Liu, Tanya Paskova

Publikováno v: Journal of Crystal Growth. 387:16-22

Systematic site-specific comparisons of the densities of threading dislocations (TDs) and associated V-defects in six-period In x Ga 1− x N/GaN multi-quantum wells (MQWs) with In mole fractions of x =0.1 and 0.2 have been conducted using several el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae71ff178bc7511df35a0ded155ef73b
https://doi.org/10.1016/j.jcrysgro.2013.10.026

Zobrazit plný text záznamu

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Autor: Steven C. Binari, Edward A. Preble, Keith R. Evans, Tanja Paskova, D. S. Katzer, David J. Meyer, Theodosia Gougousi, David F. Storm, David J. Smith, David A. Deen

Publikováno v: Journal of Crystal Growth. 380:14-17

We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular beam epitaxy. Structures with barrier thicknesses between 1.5 nm and 7.5 nm were gro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e87f06ab6fe71f5aca8858488bb4a74
https://doi.org/10.1016/j.jcrysgro.2013.05.029

Zobrazit plný text záznamu

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Autor: R. J. Kamaladasa, Jingxi Zhu, Fang Liu, Li Huang, Lisa M. Porter, Robert F. Davis, Keith R. Evans, Yoosuf N. Picard, Tanya Paskova, Edward A. Preble

Publikováno v: Journal of Crystal Growth. 347:88-94

An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3628434ff3f439d0da7f62dd5b14a7b0
https://doi.org/10.1016/j.jcrysgro.2012.03.002

Zobrazit plný text záznamu

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Autor: Jing Zhang, Xiaohang Li, Hongping Zhao, Keith R. Evans, Nelson Tansu, Guangyu Liu, G. S. Huang, Tanya Paskova

Publikováno v: Journal of Crystal Growth. 340:66-73

The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c720c50d0d5974c3f6d24431714fab0
https://doi.org/10.1016/j.jcrysgro.2011.12.037

Zobrazit plný text záznamu

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Autor: J. A. Grenko, Te Yuan Chung, Edward A. Preble, Mark Johnson, Keith R. Evans, Virginia D. Wheeler, Tanja Paskova, K. Udwary, K. Y. Lai

Publikováno v: physica status solidi (a). 209:559-564

Phone: (þ886) 3-4227151 ext: 25256, Fax: (þ886) 3-4252897InGaN/GaN quantum wells (QWs) grown at identical con-ditions on m-plane GaN and c-plane sapphire substrates werecharacterized by several techniques, aiming to clarify thereason for different

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5cbd1f0fa0422ac3bff0d039a0af5e92
https://doi.org/10.1002/pssa.201127345

Zobrazit plný text záznamu

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Autor: David J. Meyer, Edward A. Preble, Keith R. Evans, David F. Storm, Tanja Paskova, J.A. Roussos, D. S. Katzer, David A. Deen, Steven C. Binari, Robert Bass

Publikováno v: Solid-State Electronics. 54:1470-1473

AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, d(sub UID), varying between 50 nm and 500

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::34b7f73417eb00d2e232092e28f7d0e4
https://doi.org/10.1016/j.sse.2010.05.041

Zobrazit plný text záznamu

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Autor: Keith R. Evans, Edward A. Preble, Ümit Özgür, Mingzhong Wu, Hadis Morkoç, Jinqiao Xie, Xiaohang Li, Jacob H. Leach, Chang-Zhi Lu, Seydi Doğan, Xianfeng Ni, Tanja Paskova

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:908-911

InAlN/GaN heterostructure field-effect transistors (HFETs) have been grown and fabricated on Fe-doped semi-insulating c-plane GaN substrates. The problematic parasitic leakage caused by interface charge between the epitaxial layers and the GaN substr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5168cebc6c9909fe25d2fc0765592b86
https://doi.org/10.1116/1.3481138

Zobrazit plný text záznamu

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Autor: Josef Humlíček, P. Gladkov, Eduard Hulicius, Tanya Paskova, Keith R. Evans, T. Šimeček

Publikováno v: Journal of Crystal Growth. 312:1205-1209

Systematic study of optical properties of undoped and Fe-doped substrates grown by hydride vapor phase epitaxy has revealed a strong dependence of the photoluminescence, transmission, reflectivity and ellipsometric spectra on the Fe-doping level. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::890efc5a947d68e1022302f249167d91
https://doi.org/10.1016/j.jcrysgro.2009.11.032

Zobrazit plný text záznamu

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Autor: C. W. Ebert, C. L. Reynolds, Keith R. Evans, Tanja Paskova, J. A. Grenko, Simon E. Lappi, Edward A. Preble, Mark Johnson, D.W. Barlage

Publikováno v: Journal of Electronic Materials. 39:504-516

We report on the growth of Al0.25Ga0.75N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24a3c46c1b8e90ca4570747e74a22ea2
https://doi.org/10.1007/s11664-010-1153-0

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání