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Autor:
Jeff Nasadoski, Richard Alfred Beaupre, Rosa Ana Conte, Zachary Stum, Steve Arthur, Kevin Matocha, Ljubisa Dragoljub Stevanovic, Eladio Delgado, Keith Monaghan, J. L. Garrett, Peter Almern Losee, R. Ramakrishna Rao, Adam Gregory Pautsch
Publikováno v:
Materials Science Forum. :899-902
The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and