Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Keith Kasprak"'
Publikováno v:
DAC
Adoption of near-threshold voltage (NTV) operation in SRAM-based memories has been limited by reduced robustness resulting from marginal transistor operation that results in bit failures. Using silicon measurements from a large sample of 14nm FinFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e15b23aba2ea299d99562a4320a2863
https://doi.org/10.1145/3061639.3062292
https://doi.org/10.1145/3061639.3062292
Autor:
Soon Huat Lim, Dnyan Khatri, M. Y. Ho, Dakshina-Murthy Srikanteswara, Vinod Narang, Keith Kasprak
Publikováno v:
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7833f9f14c2154ae61ab01807c99f1cc
https://doi.org/10.1109/ipfa.2014.6898173
https://doi.org/10.1109/ipfa.2014.6898173
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
VLSI technology scaling in the 32-nm node and beyond has presented designers with increasing challenges to obtain performance gains, power and area reductions each successive generation. Maximum voltage limits, decreasing interconnect performance, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47557486e1c4ac8c7af95e2f6a8e00ff
https://doi.org/10.1109/vlsit.2012.6242504
https://doi.org/10.1109/vlsit.2012.6242504