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pro vyhledávání: '"Keith James Nash"'
Autor:
Louise Buckle, S Muscat, C. J. Bartlett, John H. Jefferson, Ralph Stephen Hall, Keith James Nash, S. J. Smith, Geoffrey R. Nash, M. T. Emeny, Timothy Ashley
Publikováno v:
Semiconductor Science and Technology. 20:406-411
Scanning laser microscopy was used to characterize a lateral n–i–p junction formed in an InSb quantum well. Two-dimensional scans of photocurrent, measured at 77 K under illumination from either a 633 nm or 3.4 µm laser beam, showed a peak in th
Autor:
Keith James Nash, M. T. Emeny, Geoffrey R. Nash, John H. Jefferson, Philip Derek Buckle, C. J. Bartlett, S. J. Smith, Louise Buckle, Timothy Ashley
Publikováno v:
Semiconductor Science and Technology. 20:144-148
We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n–i–p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrodinger's and Poisson's equations