Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Keith Gronlund"'
Autor:
Xi Chen, Ao Chen, Kar Kit Koh, Yiqiong Zhao, Keith Gronlund, Mu Feng, ChangAn Wang, Hesham Omar, Jun Chen, James Guerrero, Bradley Morgenfeld, Jun Lang, Yee Mei Foong, Sandra Lee
Publikováno v:
Optical Microlithography XXXII.
In recent years, compact modeling of negative tone development (NTD) resists has been extensively investigated. Specific terms have been developed to address typical NTD effects, such as aerial image intensity dependent resist shrinkage and developme
Autor:
Jen-Shiang Wang, Zhang Qiang, Guo Yunbo, David Rio, Dongqing Zhang, Mu Feng, Fei Wang, Jazer Wang, Chiawen Lin, Subramanian Krishnamurthy, James Guerrero, Tom Wallow, Wang Alvin Jianjiang, Qian Zhao, Hongxin Zhang, Wei Fang, Lei Wang, Keith Gronlund, ChangAn Wang, Ray Fei, Jiao Liang, Kar Kit Koh, Jun Lang, Shi Hongfei, Chen Zhang, Lester Wang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Classical SEM metrology, CD-SEM, uses low data rate and extensive frame-averaging technique to achieve high-quality SEM imaging for high-precision metrology. The drawbacks include prolonged data collection time and larger photoresist shrinkage due to
Autor:
Francis Goodwin, Lars W. Liebmann, Yulu Chen, Stephen Hsu, Itty Matthew, Mohamed Salama, Derren N. Dunn, Keith Gronlund, Vince Plachecki, Michael Crouse, Nicole Saulnier
Publikováno v:
SPIE Proceedings.
The initial readiness of EUV patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. Thus, Design Technology C
Autor:
Jen-Shiang Wang, Fan Yongfa, Jinze Wang, Qiao Zhao, Keith Gronlund, Zheng Leiwu, Howell Rafael C, Mu Feng
Publikováno v:
SPIE Proceedings.
The extension of optical lithography to 7 nm node and beyond relies heavily on multiple litho-etch patterning technologies. The etch processes in multiple patterning often require progressively large bias differences between litho and etch as the tar
Autor:
Fan Yongfa, Maggie Ma, Yen-Wen Lu, Zhang Qiang, Gary Zhang, Xin Guo, Mu Feng, Ronald Goossens, Peng Liu, Zheng Leiwu, Wallow Thomas I, Qian Zhao, Keith Gronlund
Publikováno v:
SPIE Proceedings.
Strong resist shrinkage effects have been widely observed in resist profiles after negative tone development (NTD) and therefore must be taken into account in computational lithography applications. However, existing lithography simulation tools, esp
Autor:
Vince Plachecki, Keith Gronlund, Yulu Chen, Michael Crouse, Stephen Hsu, Ryoung-han Kim, Obert Wood
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
EUV lithography is uniquely positioned to extend single exposure solutions for critical imaging layers at the 7 nm technology node and beyond. In this work, we demonstrate the application of advanced EUV resolution enhancement techniques to enable bi
Autor:
Stephen Hsu, Ayman Hamouda, Mark Terry, Dan J. Dechene, Keith Gronlund, Michael Crouse, Pengcheng Li, Lalit Shokeen, Gary Zhang
Publikováno v:
SPIE Proceedings.
Early in a semiconductor node’s process development cycle, the technology definition is locked down using somewhat risky assumptions on what the process can deliver once it matures. In this early phase of the development cycle, detailed design rule
Autor:
Hua-yu Liu, Jörg Zimmermann, Keith Gronlund, Steve Hansen, Stephen Hsu, Howell Rafael C, Jia Jianjun
Publikováno v:
SPIE Proceedings.
Due to the exponential growth of mobile wireless devices, low-power logic chips continue to drive device scaling. To enable sub-10 nm device scaling at an affordable cost, there is a strong need for single exposure advanced lithography. Extreme ultra
Autor:
Kars Zeger Troost, Keith Gronlund, Paul Gräupner, Oliver Schumann, Stephen Hsu, Paul van Adrichem, Jörg Zimmermann, Hua-yu Liu, Christoph Hennerkes, Steven G. Hansen, Koen van Ingen Schenau, Howell Rafael C, Frank A. J. M. Driessen, Thijs Hollink, Kaiyu Yang, Xiaofeng Liu
Publikováno v:
SPIE Proceedings.
In this paper we introduce new source-mask co-optimization (SMO) capabilities for EUV with specific support of the details of imaging with NXE:33×0 scanners. New algorithms have been developed that fully exploit the adjustability of the light distri
Autor:
Stephen Hsu, Byung-Il Choi, Bong-Ryoul Choi, Xiaofeng Liu, Howell Rafael C, Pil-Soo Kang, Keith Gronlund, Suk-Ju Lee, Sung-Woon Park, Jong-Du Kim, No-Young Chung, Ki-Ho Baik, Na-Rae Bang
Publikováno v:
SPIE Proceedings.
As patterns shrink to physical limits, advanced Resolution Enhancement Technologies (RET) encounter increasing challenges to ensure a manufacturable Pr ocess Window (PW). Moreover, due to the wide variety of pattern constructs for logic device layers