Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Keith Edmund Kunz"'
Autor:
Keith Edmund Kunz, Edgar Sanchez-Sinencio, Kyoohyun Noh, Sanghoon Lee, Stephen Heinrich-Barna
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:2498-2512
This article proposes an ultralow-power accurate current reference that generates 1-nA current. Since an automatic calibration circuit periodically calibrates the generated current of the current reference, the current reference is able to achieve ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb59b2aa69e72c7c3a2fd8c994d1c1b
https://doi.org/10.1109/jssc.2020.2995038
https://doi.org/10.1109/jssc.2020.2995038
Publikováno v:
ISSCC
A single low-dropout regulator (LDO) for high output current applications presents a challenge for chip-level thermal management and also tends to be inefficient. Straightforward parallelizing of LOOs to increase output current is a flawed approach s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45f2564df5f914e2472f814f72e37583
https://doi.org/10.1109/isscc19947.2020.9063144
https://doi.org/10.1109/isscc19947.2020.9063144
Autor:
Jozef C. Mitros, D. Goodpaster, Dan M. Mosher, C.-Y. Tsai, Hisashi Shichijo, Taylor R. Efland, Keith Edmund Kunz, Alec J. Morton
Publikováno v:
30th European Solid-State Device Research Conference.
Complementary high-voltage drain extended (DE) MOS transistors were implemented into Texas Instruments' state-of-the-art production advanced analog and digital 1.5-1.8 V CMOS technology (1), (2). These transistors allow for 5-V drain operating voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d73938528c3b87897a1853a0ab6c3002
https://doi.org/10.1109/essderc.2000.194793
https://doi.org/10.1109/essderc.2000.194793