Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Keith A. Klinedinst"'
Autor:
Nestor Perea-Lopez, Joseph J. Laski, Joanna McKittrick, Keith A. Klinedinst, Jan B. Talbot, David Hamby, K. C. Mishra, Madis Raukas, Gustavo A. Hirata, J. Tao
Publikováno v:
ECS Transactions. 16:123-134
We report luminescence from intra-configurational f-f transitions of Tb3+ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using
Autor:
Joseph J. Laski, Joanna McKittrick, Madis Raukas, Keith A. Klinedinst, Jan B. Talbot, Nestor Perea-Lopez, Kailash C. Mishra, Gustavo A. Hirata, J. Tao
Publikováno v:
physica status solidi c. 5:1889-1891
Using a three-step solution method, we have successfully synthesized rare-earth (RE) activated AlN, GaN, and pure GaAlN powders. Aluminium and/or gallium nitrates are first dissolved in water. For AlN:RE, rare-earth nitrates converted from their corr
Autor:
K. C. Mishra, Joanna McKittrick, Joseph J. Laski, Keith A. Klinedinst, S. Shimizu, J. Tao, Madis Raukas, David Hamby, Gustavo A. Hirata, Nestor Perea-Lopez, Jan B. Talbot
Publikováno v:
Journal of The Electrochemical Society. 156:J158
accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris2,2,6,6-tetramethyl-3,5-heptanedionatoterbium but not films made with trisisopropylcyclopentadienylterbium. Despite visible
Autor:
Kailash C. Mishra, Jan B. Talbot, Joseph J. Laski, Keith A. Klinedinst, Madis Raukas, Joanna McKittrick, J. Tao
Publikováno v:
Journal of The Electrochemical Society. 155:J315
Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu 3+ (GaN:Eu 3+ ) have been deposited on sapphire substrates at atmospheric pressure. Luminescence from Eu 3+ ions in GaN has been investigated using photoluminescen
Autor:
Joanna McKittrick, Kailash C. Mishra, J. Tao, Keith A. Klinedinst, Madis Raukas, Jan B. Talbot, Bing Han, Nestor Perea-Lopez
Publikováno v:
Journal of The Electrochemical Society. 155:J137
A three-step solution-based method has been adopted and improved to synthesize AlN, GaAIN, and GaN powders with low oxygen content by sequential conversion of nitrates to hydroxides to fluorides and finally into nitrides. The synthesis parameters for
Publikováno v:
Journal of The Electrochemical Society. 154:J44
The preparation of powder samples of aluminum nitride activated by dysprosium, AlN/Dy 3+ , was achieved for the first time using a low-temperature, solution-based approach. Aqueous solutions of aluminum and dysprosium nitrates was first converted to
Publikováno v:
Journal of The Electrochemical Society. 154:J262
Nitride alloys of Ga, In, and Al activated by rare-earth ions (Re 3+ ) are being considered for application in nitride-based solid-state light sources. The potential applications involve using such materials as the active layer in a heterostructure d
Publikováno v:
Journal of Chemical & Engineering Data. 24:203-206
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