Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Keith A. Joyner"'
Autor:
Keith A. Joyner, Leconte Cathey
Publikováno v:
Active and Passive Electronic Components, Vol 6, Iss 2, Pp 49-53 (1980)
Externí odkaz:
https://doaj.org/article/f439b8453ad64954a64b7cc6fbdd8118
Publikováno v:
Journal of Electronic Materials. 20:949-958
Photoreflectance (PR) was used to study SIMOX materials produced under various fabrication conditions. The position, amplitude and shape of the 3.4 eV PR response were monitored for three different sets of samples which provided information about the
Autor:
M. K. El-Ghor, J. Hollingsworth, H. H. Hosack, George A. Brown, Keith A. Joyner, Gordon P. Pollack
Publikováno v:
IEEE International SOI Conference.
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
Due to the compressive thinning of the gate oxide and the two dimensional field effects at the top corner of the transistor, there are two problems that SOI shares with bulk: lowering of the threshold voltage and GOI degradation. The V/sub t/ lowerin
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
We describe experiments on charge collection from fluorine ions striking ICs and compare with the collection from alpha particles. The fluorine ion strikes are similar to the energetic heavy ions produced when cosmic-ray-generated neutrons collide wi
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
Both partially and fully depleted NMOS pass transistors were designed and fabricated on SIMOX substrates. Using a p+ gate design, V/sub th/=1 V and I/sub off/
Publikováno v:
Proceedings. IEEE International SOI Conference.
The integrity of gate oxides formed on the device surfaces of SIMOX wafers has been a concern because of the structural imperfection of SIMOX superficial silicon layers compared to bulk silicon and the potential for metal contamination during the ext
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors describe the results of an analytic investigation of SIMOX (separation by implanted oxygen) oxide/silicon profiles using a joined half-Gaussian approximation to the instantaneous oxygen implant distribution. The advantage of this approach
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
An array of artificial particles composed of silicon dioxide was created by growing a film of SiO/sub 2/ one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interes
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors present a method for investigating buried oxide defects after the initial patterning and etching of the superficial silicon layer on a SOI (silicon-on-insulator) wafer. This method is based on the principle of charged-induced scanning ele