Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Keitaro Endo"'
Autor:
Tetsuya Yamamoto, Hiroshi Kano, Yutaka Higo, Kazuhiro Ohba, Tetsuya Mizuguchi, Masanori Hosomi, Kazuhiro Bessho, Minoru Hashimoto, Hiroyuki Ohmori, Takeyuki Sone, Keitaro Endo, Shinya Kubo, Hiroaki Narisawa, Wataru Otsuka, Nobumichi Okazaki, Makoto Motoyoshi, Hajime Nagao, Tsutomu Sagara
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p10P503-1-10P503-6, 6p, 1 Black and White Photograph, 11 Graphs
Autor:
Akihiro Maesaka, Takeyuki Sone, Naomi Yamada, Keitaro Endo, Shuichiro Yasuda, Kazuhiro Ohba, Hiroaki Narisawa, Tsunenori Shiimoto, Satoshi Sasaki, Tomohito Tsushima, Akira Kouchiyama, Katsuhisa Aratani, Tetsuya Mizuguchi
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We report a novel nonvolatile dual-layered electrolytic resistance memory composed of a conductive Cu ion activated layer and a thin insulator for the first time. An ON/OFF mechanism of this new type memory is postulated as follows: Cu ions pierce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb88351a703004b83a1754c7af4283
https://doi.org/10.1109/iedm.2007.4419064
https://doi.org/10.1109/iedm.2007.4419064
Autor:
Wataru Otsuka, Masanori Hosomi, Takeyuki Sone, Tsutomu Sagara, Minoru Hashimoto, Kazuhiro Ohba, Shinya Kubo, Takashi Yamamoto, Makoto Motoyoshi, Kazuhiro Bessho, Tetsuya Mizuguchi, Hiroshi Kano, Yutaka Higo, Hiroaki Narisawa, Nobumichi Okazaki, Keitaro Endo, Hajime Nagao, Hiroyuki Ohmori
Publikováno v:
Journal of Applied Physics. 97:10P503
The reliability in magnetoresistive random access memory (MRAM) write operation was investigated for both toggle and asteroid memory chips developed with 0.18μm CMOS process. Thermally activated magnetization reversal, being the dominant origin of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8c605559e8921cd3a185c13a01eb52
https://doi.org/10.1063/1.1851879
https://doi.org/10.1063/1.1851879