Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Keisuke Yasuta"'
Publikováno v:
ECS Transactions. 109:67-78
Amorphous indium-gallium-zinc oxide (a-IGZO) attracts much attention for next-generation flat-panel displays due to the large band gap, visible light transparency, printability, thickness-uniformity and low-temperature in film deposition. Using a-IGZ
Autor:
Keisuke Yasuta, Toshimasa Ui, Tomokazu Nagao, Daisuke Matsuo, Toshihiko Sakai, Yoshitaka Setoguchi, Eiji Takahashi, Yasunori Andoh, Junichi Tatemichi
Publikováno v:
Proceedings of the International Display Workshops. :956
Autor:
Takuma Uehara, Takashi Sugawara, Masahiko Hasumi, Yutaka Inouchi, Junichi Tatemichi, Keisuke Yasuta, Toshiyuki Sameshima, Tomokazu Nagao
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
The H+ or Ar+ precursor implantation at room temperature (RT) was proposed to activate boron atoms subsequently implanted in single crystalline silicon by post heating at a low temperature. The two-step ion implantation of 1.5×1016 cm−2 H+ at 8 ke
Autor:
Toshiyuki Sameshima, Y. Inouchi, Keisuke Yasuta, Junichi Tatemichi, Tomokazu Nagao, Masahiko Hasumi, Takuma Uehara
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Ion implantation of 1.5xl016-cm−2 H+ at 8 keV or 1.0xl014-cm−2 Ar+ at 70 keV was carried out at room temperature (RT) to crystalline silicon in advance of ion implantation of 1.0×10-15-cm−2B+ at RT. Decrease in the crystalline volume ratio and
Publikováno v:
Applied Physics A. 124
Activation and carrier generation are reported in the case of phosphorus implantation with a dose of 2.0 × 1015 cm−2 at 70 keV to crystalline silicon substrates under heating ranging from 200 to 500 °C. The analysis of the optical reflectivity sp
Autor:
Toshiyuki Sameshima, Keisuke Yasuta, Hidenao Suzuki, Tomohisa Mizuno, Tomohiko Nakamura, Takayuki Motoki, Masahiko Hasumi
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
A high photo-induced effective minority carrier lifetime τ eff of crystalline silicon was achieved by simple heat treatment in liquid water. τ eff was 2.8×10−3 s for 15-Ωcm n-type crystalline silicon heat treated in liquid water at 120°C for 1
Autor:
Sameshima, Toshiyuki1 tsamesim@cc.tuat.ac.jp, Yasuta, Keisuke1, Hasumi, Masahiko1, Nagao, Tomokazu2, Inouchi, Yutaka2
Publikováno v:
Applied Physics A: Materials Science & Processing. Mar2018, Vol. 124 Issue 3, p1-1. 1p. 8 Graphs.