Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Keisuke Mizuuchi"'
Autor:
Neal Lafferty, Sagar Saxena, Keisuke Mizuuchi, Yuansheng Ma, Xima Zhang, Pat Lacour, Alex Tritchkov, Farah Huq Kmiec, John Sturtevant
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b658ffaf767d052f91daf8f9d4e205b
https://doi.org/10.1117/12.2647882
https://doi.org/10.1117/12.2647882
Autor:
Yuangsheng Ma, Rui Wu, Junjiang Lei, Le Hong, Keisuke Mizuuchi, Fan Jiang, Alexander Tritchkov, Yuyang Sun
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5545a810932cb7bfc27d3b4d42fd1f06
https://doi.org/10.1117/12.2619416
https://doi.org/10.1117/12.2619416
Autor:
Rui Wu, Dingyi Hong, Keisuke Mizuuchi, Rehab Ali, Junjiang Lei, Le Hong, Yuansheng Ma, Yuyang Sun, Alexander Tritchkov, Fan Jiang
Publikováno v:
Photomask Technology 2021.
Inverse Lithography Technology (ILT) has become one of the key computational lithography solutions, which may produce mask output that results in better process latitude and CD control on wafer than the one using conventional OPC. However, the curvil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c3f4d06db1e6a77fb1ddf31de057fa6
https://doi.org/10.1117/12.2601918
https://doi.org/10.1117/12.2601918
Autor:
Keisuke Mizuuchi, Isabella Kim, Alexander Tritchkov, Xima Zhang, Ashutosh Rathi, Vlad Liubich, John L. Sturtevant
Publikováno v:
Photomask Technology 2021.
The patterning requirements of next generation lithographic processes and the desire to keep manufacturing costs down have pushed the lithographers to explore the advantages of the curvilinear masks. Multiple studies backed by the experimental result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fdd1f66c524e08a3e44e8959b76fcad
https://doi.org/10.1117/12.2601786
https://doi.org/10.1117/12.2601786
Publikováno v:
SPIE Proceedings.
Increasing pattern density and the higher complexity of advanced OPC and RET technologies have lead to an explosion in mask data volume. This increased data volume leads to increased mask write times, inspection times, and costs. In the past, several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb498a2c751f4fc3bae8e1637cf8a7ec
https://doi.org/10.1117/12.799410
https://doi.org/10.1117/12.799410
Autor:
Lee, Jeonghoon, Halder, Sandip, Pham, Van Tuong, Fallica, Roberto, Heo, Seonggil, Sah, Kaushik, Suh, Hyo Seon, Blanco, Victor, Gillijns, Werner, Cross, Andrew, Maguire, Ethan, Armeanu, Ana-Maria, Liubich, Vladislav, Malankin, Evgeny, Zhang, Xima, Sears, Monica Kempsell, Lafferty, Neal, Fenger, Germain, Wei, Chih-I, Kim, Ryoung Han
Publikováno v:
Proceedings of SPIE; 4/8/2023, Vol. 12495, p124950S-124950S-11, 1p
Autor:
Ma, Yuansheng, Wu, Rui, Lei, Junjiang, Mizuuchi, Keisuke, Tritchkov, Alexander, Jiang, Fan, Hong, Dingyi, Ali, Rehab, Hong, Le, Sun, Yuyang
Publikováno v:
Proceedings of SPIE; 7/6/2021, Vol. 11855, p118550T-118550T-10, 1p