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Akademický článek

Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution

Autor: Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Publikováno v: Advanced Science, Vol 9, Iss 13, Pp n/a-n/a (2022)

Abstract Tin mono‐selenide (SnSe) exhibits the world record of thermoelectric conversion efficiency ZT in the single crystal form, but the performance of polycrystalline SnSe is restricted by low electronic conductivity (σ) and high thermal conduc

Externí odkaz: https://doaj.org/article/15d6b01472f548439c2f1ca08798bfcf

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Akademický článek

Breaking of Thermopower–Conductivity Trade‐Off in LaTiO3 Film around Mott Insulator to Metal Transition

Autor: Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

Publikováno v: Advanced Science, Vol 8, Iss 23, Pp n/a-n/a (2021)

Abstract Introducing artificial strain in epitaxial thin films is an effective strategy to alter electronic structures of transition metal oxides (TMOs) and to induce novel phenomena and functionalities not realized in bulk crystals. This study repor

Externí odkaz: https://doaj.org/article/00403e0efc7141679144a58ac46e3b47

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Akademický článek

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

Autor: Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Publikováno v: AIP Advances, Vol 6, Iss 1, Pp 015106-015106-8 (2016)

We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emi

Externí odkaz: https://doaj.org/article/2fd39ea197784d809b81e9c8dfa8254c

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Akademický článek

SnS thin films prepared by H2S-free process and its p-type thin film transistor

Autor: Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

Publikováno v: AIP Advances, Vol 6, Iss 1, Pp 015112-015112-6 (2016)

Polycrystalline SnS thin films were fabricated by a H2S-free process combing pulsed laser deposition at room temperature and post-deposition thermal annealing in Ar. Thermal annealing improved the crystalline quality of the SnS films and the best fil

Externí odkaz: https://doaj.org/article/4e6a7414b9fe4314928ba1f99002fd2a

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