Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Keisuke Hozo"'
Autor:
Ryoya Hiramatsu, Ryo Takahashi, Ryoto Fujiki, Keisuke Hozo, Kanato Sawai, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
In this paper, a hybrid numerical simulation tool is introduced and performed for GaInN-based light-emitting diodes (LEDs) with metal-embedded nanostructure to theoretically predict external quantum efficiency (EQE), which composed of finite-differen
Externí odkaz:
https://doaj.org/article/d95d8acc11ef4e98ab17d11ddd3c1efa
Autor:
Ryoto Fujiki, Ryo Takahashi, Ryoya Hiramatsu, Keisuke Hozo, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Journal of Crystal Growth. 593:126751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcdd22c6d69a43ac3b75e67b0ce0a4fd
https://doi.org/10.1016/j.jcrysgro.2022.126751
https://doi.org/10.1016/j.jcrysgro.2022.126751
Autor:
Ryo Takahashi, Ryoto Fujiki, Keisuke Hozo, Ryoya Hiramatsu, Makoto Matsukura, Takahiro Kojima, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Applied Physics Letters. 120:142102
This study aims to improve the crystalline quality of 650-nm GaIn0.17N/GaIn0.38N red-emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO4 (SCAM) substrate. When using the SCAM substrate, the diffusion and/or penetration of impurities, incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ba2bb045d5532bcffdff81871c3731d
https://doi.org/10.1063/5.0088250
https://doi.org/10.1063/5.0088250