Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Keishi Shiomi"'
Autor:
Dolf Timmerman, Keishi Shiomi, Yasufumi Fujiwara, Tomohiro Inaba, Jun Tatebayashi, Shuhei Ichikawa
Publikováno v:
Journal of the Society of Materials Science, Japan. 69:762-766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b645a80aaa37f2ac3165e04db4ee173
https://doi.org/10.2472/jsms.69.762
https://doi.org/10.2472/jsms.69.762
Autor:
Tomohiro Inaba, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara, Shuhei Ichikawa, Keishi Shiomi
Publikováno v:
ACS Applied Electronic Materials. 2:732-738
We demonstrate a GaN:Eu,O-based resonant-cavity light emitting diode (RCLED) fabricated with a n-type conductive Al0.82In0.18N/GaN bottom-distributed Bragg reflector (DBR) and a ZrO2/SiO2 top-DBR a...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c8e422745f28a82b109d4507cc0339
https://doi.org/10.1021/acsaelm.9b00806
https://doi.org/10.1021/acsaelm.9b00806
Autor:
Keishi Shiomi, Yasufumi Fujiwara, Tomoaki Nambu, Tenta Komatsu, Ryuji Katayama, Masahiro Uemukai
Publikováno v:
Gallium Nitride Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac885d7ccfd87b48287f0fd33b47b48
https://doi.org/10.1117/12.2507606
https://doi.org/10.1117/12.2507606
Autor:
Yasufumi Fujiwara, Masafumi Kihira, Keishi Shiomi, Junya Miwa, Masahiro Uemukai, Ryuji Katayama
Publikováno v:
Gallium Nitride Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e290df9c2f93115e0e163be0a8c890b
https://doi.org/10.1117/12.2510634
https://doi.org/10.1117/12.2510634
Autor:
Tomoyuki Tanikawa, Ryuji Katayama, Takumi Nagata, Soshi Umeda, Keishi Shiomi, Kazunori Serita, Yasufumi Fujiwara, Masahiro Uemukai, Abdul Mannan, Toshiki Hikosaka, Filchito Renee Bagsican, Tomoaki Nambu, Masayoshi Tonouchi, Iwao Kawayama
Publikováno v:
Applied Physics Express. 14:061004
We proposed a monolithic microcavity wavelength conversion device without a polarity-inverted structure. The device consists of a low birefringence paraelectric material and a dielectric material. A fundamental wave intensity is enhanced significantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c566a8cebeefa2faadcd10edbcf0e78d
https://doi.org/10.35848/1882-0786/abff9e
https://doi.org/10.35848/1882-0786/abff9e
Autor:
Dolf Timmerman, Takaya Morikawa, Yasufumi Fujiwara, Yutaka Sasaki, Shuhei Ichikawa, Jun Tatebayashi, Keishi Shiomi
Publikováno v:
Applied Physics Express. 14:031008
High-density micro light-emitting diode (μ-LED) arrays are key to next-generation ultrahigh-resolution displays. As a novel candidate, we report monolithic vertically stacked full-color LEDs consisting of Eu-doped GaN and InGaN quantum wells (QWs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a432b15901e03fca0337b5050e1396fb
https://doi.org/10.35848/1882-0786/abe603
https://doi.org/10.35848/1882-0786/abe603
Publikováno v:
ECS Meeting Abstracts. :1401-1401
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. This is essential for the monolithic integration of the three primary colors and the development of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7adf24a3ea3be2354c9bbade58e469fe
https://doi.org/10.1149/ma2018-01/23/1401
https://doi.org/10.1149/ma2018-01/23/1401