Zobrazeno 1 - 10
of 544
pro vyhledávání: '"Keilmann, F"'
Publikováno v:
Physical Review Research 2, 023272 (2020)
We present combined experimental and numerical work on light-matter interactions at nanometer length scales. We report novel numerical simulations of near-field infrared nanospectroscopy that consider, for the first time, detailed tip geometry and ha
Externí odkaz:
http://arxiv.org/abs/2006.05414
Autor:
Fei, Z., Iwinski, E. G., Ni, G. X., Zhang, L. M., Bao, W., Rodin, A. S., Lee, Y., Wagner, M., Liu, M. K., Dai, S., Goldflam, M. D., Thiemens, M., Keilmann, F., Lau, C. N., Castro-Neto, A. H., Fogler, M. M., Basov, D. N.
Publikováno v:
Nano Lett. 15, 4973-4978 (2015)
We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled
Externí odkaz:
http://arxiv.org/abs/1508.07883
Autor:
Dai, S., Ma, Q., Andersen, T., McLeod, A. S., Fei, Z., Liu, M. K., Wagner, M., Watanabe, K., Taniguchi, T., Thiemens, M., Keilmann, F., Jarillo-Herrero, P., Fogler, M. M., Basov, D. N.
Publikováno v:
Nature Communications 6, 6963 (2015)
Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. In such materials light propagation is unusual, leading to novel and often non-intuitive optical phenomena. Here we re
Externí odkaz:
http://arxiv.org/abs/1502.04094
Autor:
Dai, S., Ma, Q., Liu, M. K., Andersen, T., Fei, Z., Goldflam, M., Wagner, M., Watanabe, K., Taniguchi, T., Thiemens, M., Keilmann, F., Janssen, G. C. A. M., Zhu, S. -E., Jarillo-Herrero, P., Fogler, M. M., Basov, D. N.
Publikováno v:
Nature Nanotechnology 10, 682-686 (2015)
Hexagonal boron nitride (h-BN) is a natural hyperbolic material, for which the dielectric constants are the same in the basal plane (epsilon^t = epsilon^x = epsilon^y) but have opposite signs (epsilon^t*epsilon^z < 0) from that in the normal plane (e
Externí odkaz:
http://arxiv.org/abs/1501.06956
Autor:
Fei, Z., Rodin, A. S., Gannett, W., Dai, S., Regan, W., Wagner, M., Liu, M. K., McLeod, A. S., Dominguez, G., Thiemens, M., Neto, A. H. Castro, Keilmann, F., Zettl, A., Hillenbrand, R., Fogler, M. M., Basov, D. N.
Publikováno v:
Nature Nanotechnology 8, 821-825 (2013)
Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most pro
Externí odkaz:
http://arxiv.org/abs/1311.6827
Autor:
Fei, Z., Rodin, A. S., Andreev, G. O., Bao, W., McLeod, A. S., Wagner, M., Zhang, L. M., Zhao, Z., Dominguez, G., Thiemens, M., Fogler, M. M., Castro-Neto, A. H., Lau, C. N., Keilmann, F., Basov, D. N.
Publikováno v:
Nature (2012) 487,82-85
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabri
Externí odkaz:
http://arxiv.org/abs/1202.4993
Autor:
Qazilbash, M. M., Tripathi, A., Schafgans, A. A., Kim, Bong-Jun, Kim, Hyun-Tak, Cai, Zhonghou, Holt, M. V., Maser, J. M., Keilmann, F., Shpyrko, O. G., Basov, D. N.
Publikováno v:
Physical Review B 83, 165108 (2011)
We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addi
Externí odkaz:
http://arxiv.org/abs/1109.3347
Autor:
Qazilbash, M. M., Brehm, M., Andreev, G. O., Frenzel, A., Ho, P. -C., Chae, Byung-Gyu, Kim, Bong-Jun, Yun, Sun Jin, Kim, Hyun-Tak, Balatsky, A. V., Shpyrko, O. G., Maple, M. B., Keilmann, F., Basov, D. N.
Publikováno v:
Phys. Rev. B 79, 075107 (2009)
We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy dir
Externí odkaz:
http://arxiv.org/abs/0904.0294
Autor:
Qazilbash, M. M., Li, Z. Q., Podzorov, V., Brehm, M., Keilmann, F., Chae, B. G., Kim, H. T., Basov, D. N.
Publikováno v:
Applied Physics Letters 92, 241906 (2008)
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at t
Externí odkaz:
http://arxiv.org/abs/0806.4826
Autor:
Qazilbash, M. M., Brehm, M., Chae, Byung-Gyu, Ho, P. -C., Andreev, G. O., Kim, Bong-Jun, Yun, Sun Jin, Balatsky, A. V., Maple, M. B., Keilmann, F., Kim, Hyun-Tak, Basov, D. N.
Publikováno v:
Science 318, 1750 (2007)
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically diffe
Externí odkaz:
http://arxiv.org/abs/0801.1171