Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Keiko Koshiba"'
Autor:
Hiroaki Dobashi, Hiroshi Sato, Sei Muraoka, Toshihiro Nanki, Nobuyuki Yajima, Eri Watanabe, Junko Nishio, Mai Kawazoe, Risa Wakiya, Soichi Yamada, Shotaro Masuoka, Tomoki Hayashi, Satoshi Mizutani, Zento Yamada, Keiko Koshiba, Izumi Irita, Miwa Kanaji, Karin Furukawa, Wataru Hirose
Publikováno v:
Lupus Science and Medicine, Vol 10, Iss Suppl 1 (2023)
Externí odkaz:
https://doaj.org/article/6de251f5bf9d46c089b16bd5f9423077
Autor:
Shotaro Masuoka, Takashi Tanaka, Miwa Kanaji, Karin Furukawa, Keiko Koshiba, Zento Yamada, Eri Watanabe, Mai Kawazoe, Shun Ito, Ayako Fuchigami, Toshihiro Nanki
Publikováno v:
Modern Rheumatology Case Reports; Jul2024, Vol. 8 Issue 2, p280-285, 6p
Publikováno v:
Welding International. :1-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fea1f1b338055f6fb35de691229ec9a
https://doi.org/10.1080/09507116.2023.2203967
https://doi.org/10.1080/09507116.2023.2203967
Autor:
Keiko Koshiba, Kohei Tatsumi
Publikováno v:
Journal of the Japan Institute of Metals and Materials. 87:81-87
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5955e8a0c3e60963098065e83abc8f
https://doi.org/10.2320/jinstmet.j2022039
https://doi.org/10.2320/jinstmet.j2022039
Autor:
Yasunori TANAKA, Keiko KOSHIBA, Tomonori IIZUKA, Mayumi ITO, Koichi HIGASHIMINE, Kohei TATSUMI
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 41:159-167
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8df2b33b7352728315cc0a08cd33d8
https://doi.org/10.2207/qjjws.41.159
https://doi.org/10.2207/qjjws.41.159
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 40:258-265
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cba114c14b6c4ebdd94ade9dfe06d556
https://doi.org/10.2207/qjjws.40.258
https://doi.org/10.2207/qjjws.40.258
Long-term Reliability of Nickel Micro-Plating Bonding by Using Resonant Type Fatigue Testing Machine
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 40:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646d4c36a066eec58d0fb2df6c71011a
https://doi.org/10.2207/qjjws.40.1
https://doi.org/10.2207/qjjws.40.1
Publikováno v:
Japanese Journal of Applied Physics. 62:016507
Next-generation power devices using wide bandgap semiconductors, such as SiC, are expected to operate at higher temperatures than conventional Si power devices, and their operating temperatures are expected to exceed 250 °C. We developed a novel hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bab2c1f77e88c49f9bbd662c54b0cc3
https://doi.org/10.35848/1347-4065/acae67
https://doi.org/10.35848/1347-4065/acae67
Publikováno v:
Japanese Journal of Applied Physics. 62:012001
It is popular to research promoting the light conversion efficiency of crystalline silicon solar cell photovoltaic (PV) modules. However, excellent light conversion efficiency does not mean it could maintain initial performance after long-term runnin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3efd64780ed2e1fc912c2cf45795f9b
https://doi.org/10.35848/1347-4065/aca306
https://doi.org/10.35848/1347-4065/aca306
Autor:
Kohei Tatsumi, Tomonori Iizuka, Masayuki Hikita, Rikiya Kamimura, Tomoya Itose, Itaru Miyazaki, Isamu Morisako, Keiko Koshiba, Naoki Fukui
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1abf952deb55ceec2aaa80d5d26267f
https://doi.org/10.1109/ectc32862.2020.00346
https://doi.org/10.1109/ectc32862.2020.00346