Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Keiko Fujihira"'
Autor:
Keiko Fujihira, Akemi Nagae, Naoki Yutani, Kenichi Ohtsuka, Hiroshi Watanabe, Y. Fujii, T. Nakatani, Yoshiyuki Nakaki, Shuhei Nakata
Publikováno v:
Materials Science Forum. 725:53-56
SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89bb9c0874aaeff398417587b3e4b560
https://doi.org/10.4028/www.scientific.net/msf.725.53
https://doi.org/10.4028/www.scientific.net/msf.725.53
Autor:
Tetsuya Takami, Yukiyasu Nakao, Shohei Yoshida, Masayuki Imaizumi, Tatsuo Oomori, Keiko Fujihira, Naruhisa Miura
Publikováno v:
Materials Science Forum. :799-802
The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD of thermal oxide becomes smaller for the larger oxide area, the QBD of CVD oxide is almost independent of the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528b611b199981c80a61d0861fe7c3e8
https://doi.org/10.4028/www.scientific.net/msf.600-603.799
https://doi.org/10.4028/www.scientific.net/msf.600-603.799
Publikováno v:
Materials Science Forum. :1035-1038
Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type surface region. The contact resistance is calculated from the comparison to I-V characteristic of Schottky struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04bdba1f7e6d14493e7fc8f80bdfc126
https://doi.org/10.4028/www.scientific.net/msf.600-603.1035
https://doi.org/10.4028/www.scientific.net/msf.600-603.1035
Autor:
Naruhisa Miura, Tatsuo Oomori, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Masayuki Imaizumi, Yoichiro Tarui
Publikováno v:
Materials Science Forum. :999-1002
A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main cause of the leakage current, was observed in about 90% of the current leak points of our pn diodes. Double sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::167c9b0504090ccf03a4a95f9091a630
https://doi.org/10.4028/www.scientific.net/msf.600-603.999
https://doi.org/10.4028/www.scientific.net/msf.600-603.999
Autor:
Tatsuo Oomori, Tetsuya Takami, Naoki Yutani, Keiko Fujihira, Naruhisa Miura, Ken Ichi Ohtsuka, Tomokatsu Watanabe, Yukiyasu Nakao, Masayuki Imaizumi
Publikováno v:
Materials Science Forum. :827-830
Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body surface (Nas) is varied in the range from 5×1015 to 2×1018 cm-3. The MOSFETs show normally-off characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3baf849de862c6f97718501c56938ade
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
Autor:
Shin Ichi Kinouchi, Naruhisa Miura, Yukiyasu Nakao, Tetsuya Takami, Masayuki Imaizumi, Keiko Fujihira, Yoichiro Tarui, Hiroshi Nakatake, Tatsuo Ozeki, Tomokatsu Watanabe
Publikováno v:
Materials Science Forum. :1289-1292
Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca0f8ea09c801d04481618543a691f5
https://doi.org/10.4028/www.scientific.net/msf.527-529.1289
https://doi.org/10.4028/www.scientific.net/msf.527-529.1289
Autor:
Yoichiro Tarui, Tatsuo Ozeki, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Masayuki Imaizumi, Tatsuo Oomori, Tetsuya Takami, Hiroaki Sumitani, Naruhisa Miura
Publikováno v:
Materials Science Forum. :1285-1288
4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayer channel which improves the surface where the MOS channel is formed. By the optimization of the epilayer channel and the MOSFET cell structure, an ON-resistance of 12.9 mc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3218bbcb2290ce88d9acdbcd3b442d91
https://doi.org/10.4028/www.scientific.net/msf.527-529.1285
https://doi.org/10.4028/www.scientific.net/msf.527-529.1285
Autor:
Kenichi Ohtsuka, Masayuki Imaizumi, Yoichiro Tarui, Kazumasa Kawase, Tatsuya Shiramizu, Tetsuya Takami, Jyunji Tanimura, Keiko Fujihira, Tatsuo Ozeki
Publikováno v:
Solid-State Electronics. 49:896-901
4H–SiC(0 0 0 1) MOSFET annealed in N2O at below 1150 °C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d456cd67dd3ddfce14e830105ebe51b
https://doi.org/10.1016/j.sse.2004.10.016
https://doi.org/10.1016/j.sse.2004.10.016
Publikováno v:
Materials Science Forum. :697-700
The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34f3f081e0011ef9d223e89f650400a
https://doi.org/10.4028/www.scientific.net/msf.483-485.697
https://doi.org/10.4028/www.scientific.net/msf.483-485.697
Publikováno v:
Materials Science Forum. :161-164
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff26db9bafacc36cf66364012587349a
https://doi.org/10.4028/www.scientific.net/msf.433-436.161
https://doi.org/10.4028/www.scientific.net/msf.433-436.161