Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Keiji Sugi"'
Autor:
Daimotsu Kato, Keiji Sugi, Tomoaki Sawabe, Tomio Ono, Hayato Kakizoe, Yutaka Nakai, Tomoko Sugizaki, Akio Amano, Yasushi Shinjo
Publikováno v:
SID Symposium Digest of Technical Papers. 46:790-793
We propose a new technique to fabricate a transmissive one-side-emission OLED panel with alignment-free cathode patterning. This technique can reduce the non-luminescent and non-transparent area and result in the enlargement of luminescent area. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73623f57cc29fac8802ddad82c655cb6
https://doi.org/10.1002/sdtp.10307
https://doi.org/10.1002/sdtp.10307
Autor:
Yuriko Nishiyama-Fujita, Tomonori Nakazato, Noriyoshi Iriyama, Michihide Tokuhira, Maho Ishikawa, Eriko Sato, Tomoiku Takaku, Keiji Sugimoto, Hiroyuki Fujita, Isao Fujioka, Shun Tsuchiya, Yuta Kimura, Eisaku Iwanaga, Norio Komatsu, Norio Asou, Masahiro Kizaki, Yoshihiro Hatta, Tatsuya Kawaguchi
Publikováno v:
Annals of Medicine, Vol 54, Iss 1, Pp 1244-1254 (2022)
Introduction Few studies have reported the outcomes of adolescents and young adults (AYAs) with chronic-phase chronic myeloid leukaemia (CML-CP) on tyrosine kinase inhibitors (TKIs).Materials and methods We retrospectively analysed the clinical featu
Externí odkaz:
https://doaj.org/article/2e6495f34fd84e83afef69bd99b33b59
Autor:
Tomio Ono, Tomoko Sugizaki, Keiji Sugi, Daimotsu Kato, Isao Amemiya, Akio Amano, Tomoaki Sawabe, Hayato Kakizoe, Shintaro Enomoto, Yasushi Shinjo
Publikováno v:
SID Symposium Digest of Technical Papers. 44:689-692
We fabricated a transmissive one-side-emission organic light emitting diode (OLED) based on a stripe-shaped cathode. The fabricated transmissive OLED whose panel size is 180 × 90 mm2 showed high transmittance of 68% with the luminance ratio of the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530fc1852e0adb0cef78922e97d37d9b
https://doi.org/10.1002/j.2168-0159.2013.tb06306.x
https://doi.org/10.1002/j.2168-0159.2013.tb06306.x
Autor:
Hajime Yamaguchi, Keiji Sugi, Tomomasa Ueda, Nobuyoshi Saito, Masato Hiramatsu, Arichika Ishida, Tatsunori Sakano, Isao Amemiya, Shintaro Nakano, Kentaro Miura
Publikováno v:
Journal of the Society for Information Display. 20:493-498
We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) on transparent polyimide films against bias-temperature stress below 100 mV, which is equivalent to those on glass substrates. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cafe46fb4cb6ea242b835a5323ca08f
https://doi.org/10.1002/jsid.111
https://doi.org/10.1002/jsid.111
Autor:
Keiji Sugi, Tatsunori Sakano, Masato Hiramatsu, Tomomasa Ueda, Arichika Ishida, Nobuyoshi Saito, Hajime Yamaguchi, Kentaro Miura, Isao Amemiya, Shintaro Nakano
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1002-1005
Threshold voltage shifts of a-IGZO TFTs on plastics against bias-temperature stress were successfully reduced below 0.03 V, equivalent to those on glass substrates. We have developed an 11.7-inch qHD (960xRGBx540) flexible bottom-emission active-matr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ae2340ef20da47622eafacaf718b198
https://doi.org/10.1002/j.2168-0159.2012.tb05961.x
https://doi.org/10.1002/j.2168-0159.2012.tb05961.x
Autor:
Keiji Sugi, Tomomasa Ueda, Junichi Tonotani, Tatsunori Sakano, Nobuyoshi Saito, Hisashi Kameoka, Keiko Akimoto, Isao Amemiya, Yujiro Hara, Kentaro Miura, Hajime Yamaguchi, Shintaro Nakano
Publikováno v:
SID Symposium Digest of Technical Papers. 42:21-24
We have reduced threshold voltage shift of IGZO TFTs processed at 200°C under bias-temperature stress of Vg = 20 V at 70°C for 2000 s to 0.22 V by optimizing IGZO deposition and annealing conditions. A flexible AMOLED display with integrated gate d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a28ed71dca77138c149231a9e92afec
https://doi.org/10.1889/1.3621277
https://doi.org/10.1889/1.3621277
All-Solution-Processed Organic Thin Film Transistors Fabricated by Non-Piezoelectric Inkjet Printing
Autor:
Keiji Sugi, Kenichi Mori, Isao Takasu, Yuko Nomura, Hideyuki Nakao, Shuichi Uchikoga, Isao Amemiya
Publikováno v:
ECS Transactions. 3:307-312
Non-piezoelectric inkjet printing methods, namely, ultrasonic inkjet printing and electrostatic inkjet printing have been used for fabricating an all-solution-processed organic thin- film transistor. Silver nanoparticle ink is patterned to form sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::992159f31648ed771025f6691442f60b
https://doi.org/10.1149/1.2356368
https://doi.org/10.1149/1.2356368
Publikováno v:
Japanese Journal of Applied Physics. 45:442-446
We have examined charge carrier injection from electrodes to tris(8-hydroxyquinoline) aluminum (Alq3) with insulator insertion layers by displacement current measurement (DCM). The inserted materials we used are LiF and a long chain alkane C44H90 (TT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8459a0fa14d36cc9779fde22f0c26b6f
https://doi.org/10.1143/jjap.45.442
https://doi.org/10.1143/jjap.45.442
Autor:
Yukio Ouchi, Yuki Kimura, Hisao Ishii, Kazuhiko Seki, Michio Niwano, Eisuke Ito, Y. Washizu, Keiji Sugi, Naoki Hayashi
Publikováno v:
Thin Solid Films. :412-415
Recently high and persistent spontaneous buildup of a surface potential (SP) upon vacuum deposition of tris (8-hydroxyquinolinato) aluminum (III) (Alq 3 ), which is widely used for organic light emitting devices, on a gold substrate under dark condit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe81b4496d5960847092c666a20c2ef
https://doi.org/10.1016/j.tsf.2004.06.035
https://doi.org/10.1016/j.tsf.2004.06.035
Autor:
Michio Niwano, Yasuo Kimura, Y. Washizu, Hisao Ishii, Keiji Sugi, Kanako Seki, Yukio Ouchi, Eisuke Ito, Naoki Hayashi
Publikováno v:
Physics of Organic Semiconductors
Band bending is a fundamental issue for discussing organic devices. Band bending with Fermi level alignment between semiconductors and metals are often assumed, although the validity of this scheme in the case of organic semiconductors has been not y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa72a0324d830f40c437721c0c7e13a
https://doi.org/10.1002/pssa.200404346
https://doi.org/10.1002/pssa.200404346