Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Keiichiro Urabe"'
Autor:
Yoshihiro Sato, Satoshi Shibata, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, Koji Eriguchi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 769-777 (2022)
In the design of ultralow leakage devices such as image sensors, it is necessary to understand the influence of low-density defects during plasma processing—plasma-induced physical damage (PPD)—on device performance. Defects created by plasma exp
Externí odkaz:
https://doaj.org/article/661e446e6a0d437eb4d0b4c71df305ab
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1010
To investigate the electrical properties and degradation features of dielectric materials during plasma exposure, we developed an in situ impedance spectroscopy (IS) system. We applied the proposed system to monitor SiO2/Si structures exposed to Ar p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdf18e2592f4ca128c20b89bb26e903
https://doi.org/10.35848/1347-4065/acc7ae
https://doi.org/10.35848/1347-4065/acc7ae
Autor:
Yoshihiro Sato, Satoshi Shibata, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, Koji Eriguchi
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062209
Understanding the effects of defect creation during plasma exposure is crucial for designing future ultra-low leakage current devices. Created defects play a role as carrier conduction paths, leading to an increase in the p–n junction leakage curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5abd09a03510ba7bba58b5a1151005
https://doi.org/10.1116/6.0002181
https://doi.org/10.1116/6.0002181
Autor:
Yoshihiro Sato, Keiichiro Urabe, Takayoshi Yamada, Masashi Murakami, Masayuki Yamasaki, Koji Eriguchi, Nishimura Kazuko
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Currently, silicon-based ultra-large-scale integrated circuits (ULSIs) are widely used in electronic devices. High-performance and high-density ULSIs are realized by scaling down the feature sizes of field-effect transistors. To manufacture leading-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49a08907f0e0b7668dd069516bd400e7
https://doi.org/10.23919/iwjt52818.2021.9609500
https://doi.org/10.23919/iwjt52818.2021.9609500
Publikováno v:
IRPS
We propose a method to analyze the dielectric degradation and breakdown dynamics under electrical stressing on the basis of time-resolved impedance $Z(\omega, t)$ spectra-time-dependent impedance spectroscopy (TDIS). Nyquist plots of $Z(\omega, t)$ s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5eeaabaaddeebc0de7dddee19d71bf
https://doi.org/10.1109/irps46558.2021.9405190
https://doi.org/10.1109/irps46558.2021.9405190
Autor:
Masashi Murakami, Nishimura Kazuko, Takayoshi Yamada, Masayuki Yamasaki, Yoshihiro Sato, Koji Eriguchi, Keiichiro Urabe
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Precise control of low-density defect creation during plasma processing is critical for designing ultra-low leakage devices. Unlike conventional vertical defect creation mechanisms, the "stochastic lateral straggling" of incident particles during pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9dab1d4b1acfd38697ea2edf25074c
https://doi.org/10.1109/iedm13553.2020.9372074
https://doi.org/10.1109/iedm13553.2020.9372074
Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis
Publikováno v:
Journal of Applied Physics. 131:133302
Plasma process-induced damage (PID) to SiN dielectric films was investigated by using an impedance (admittance)-based technique. Multi-layered equivalent circuits were introduced to assign the spatial and energy distribution of defects created in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f3f842f2f32cb2232bae4a76aeda91
https://doi.org/10.1063/5.0085042
https://doi.org/10.1063/5.0085042
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e5541087221790a43feda93ad5a641
https://doi.org/10.7567/ssdm.2020.k-1-04
https://doi.org/10.7567/ssdm.2020.k-1-04
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3737ae22434116c90cfde05386a53a86
https://doi.org/10.23919/sispad49475.2020.9241621
https://doi.org/10.23919/sispad49475.2020.9241621
Autor:
Naoki Shirai, Kenji Tanaka, A. Sirinelli, Tsuyoshi Akiyama, Y. Zhou, J. P. Knauer, M. A. Van Zeeland, R. L. Boivin, T. N. Carlstrom, Naoyuki Oyama, Keiichiro Urabe, Hulin Liu, Ryo Yasuhara, Kai Jakob Brunner
Publikováno v:
Journal of Instrumentation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7446abc04ace89f95b3edf93d234b5e
https://hdl.handle.net/21.11116/0000-0005-8B14-821.11116/0000-0005-78AB-421.11116/0000-0005-78A9-6
https://hdl.handle.net/21.11116/0000-0005-8B14-821.11116/0000-0005-78AB-421.11116/0000-0005-78A9-6
