Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Keiichiro Niitsu"'
Autor:
Jiwang Yan, Keiichiro Niitsu
Publikováno v:
Precision Engineering. 62:213-222
A nanosecond pulsed Nd:YVO4 laser was irradiated on a boron-doped single-crystal silicon wafer after rough and fine grinding processes to recover the grinding-induced subsurface damages. The surface topography of samples was investigated by using a w
Publikováno v:
Materials Science in Semiconductor Processing. 82:54-61
A nanosecond pulsed Nd:YAG laser was irradiated on a boron-doped single-crystal silicon wafer with a diamond grinding finish to recover the grinding-induced subsurface damage. In order to visualize and measure the depth of the laser melted/recrystall
Publikováno v:
Key Engineering Materials. 701:97-100
Silicon wafers are the most widely used semiconductor substrates. It has been considered that silicon wafers after chemomechanical polishing (CMP) have no subsurface defects. However, in fact, defects such as dislocation and latent microcracks will r
Publikováno v:
Surface and Coatings Technology. 272:239-245
A series of CrSiCN coatings with various Si concentrations were deposited on Si(100) wafers, and the influence of Si content on the microstructure, mechanical property and crack resistance of the coatings was investigated by XRD, Raman spectroscopy a
Publikováno v:
Surface Topography: Metrology and Properties. 7:015013
Autor:
Jiwang Yan, Keiichiro Niitsu
Publikováno v:
The Proceedings of The Manufacturing & Machine Tool Conference. :119-120