Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Keiichiro Asai"'
Autor:
Shigeaki Sumiya, Hideto Miyake, Keiichiro Asai, Osamu Oda, H. Katsukawa, Mutsuhiro Tanaka, Tomohiko Shibata, M. Mouri, Kazumasa Hiramatsu
Publikováno v:
physica status solidi (c). :2023-2026
This paper presents crystal qualities of high-quality AlN epitaxial films on (0001)-faced sapphire and6H-SiC substrates. The AlN epitaxial films are grown using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. 0.5–1 μm-thick AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa4dca62975a26d2a33dad9fbf78a098
https://doi.org/10.1002/pssc.200303392
https://doi.org/10.1002/pssc.200303392
Autor:
Hiroyasu Ishikawa, Masahiro Sakai, Tomohiko Shibata, Osamu Oda, Shigeaki Sumiya, Masayoshi Umeno, Mitsuhiro Tanaka, Takashi Jimbo, Yoshitaka Kuraoka, Keiichiro Asai, Takashi Egawa
Publikováno v:
Journal of Crystal Growth. 244:6-11
High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/V s with the carrier concentration of 7.6×1016 cm−3 at 300 K along with low dislocation density of 5×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a4821f571998a4bc89a2b61a74a7e1
https://doi.org/10.1016/s0022-0248(02)01573-7
https://doi.org/10.1016/s0022-0248(02)01573-7
Autor:
Tomohiko Shibata, Junko Shibata, Kazuyuki Kaigawa, Yukinori Nakamura, Hiroaki Sakai, Mitsuhiro Tanaka, Keiichiro Asai
Publikováno v:
Journal of Crystal Growth. 229:63-68
A-plane (1210) AlN films were deposited on the off-angle R-plane (1 102) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42de3b333f014e2f083dbcc8e69db59d
https://doi.org/10.1016/s0022-0248(01)01051-x
https://doi.org/10.1016/s0022-0248(01)01051-x
Autor:
Hiroyasu Ishikawa, Mitsuhiro Tanaka, Makoto Miyoshi, M. Mouri, Osamu Oda, Keiichiro Asai, T. Egawa, Tomohiko Shibata
Publikováno v:
Applied Physics Letters. 85:1710-1712
Al0.26Ga0.74N∕AlN∕GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates signifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::795981d58d9f69b13bc16a02de55da0d
https://doi.org/10.1063/1.1790073
https://doi.org/10.1063/1.1790073
Autor:
Mitsuhiro Tanaka, Yoshitaka Kuraoka, Keiichiro Asai, Osamu Oda, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Subramaniam Arulkumaran, Tomohiko Shibata, Masahiro Sakai, Shigeaki Sumiya
Publikováno v:
APPLIED PHYSICS LETTERS. 81(6):1131-1133
High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room temperature. Better dc characteristics with high extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fff55ada7b473a51c6e215c21239673f
http://id.nii.ac.jp/1476/00005072/
http://id.nii.ac.jp/1476/00005072/
Autor:
Takayuki Sota, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Mitsuhiro Tanaka, Takeyoshi Onuma, Shigefusa F. Chichibu
Publikováno v:
Applied Physics Letters. 81:652-654
Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe2f2881a3f09c30359156549bd1a5f
https://doi.org/10.1063/1.1493666
https://doi.org/10.1063/1.1493666
Autor:
Hiroyasu Ishikawa, A. Imanishi, Takashi Egawa, Makoto Miyoshi, M. Mouri, Tomohiko Shibata, Osamu Oda, Keiichiro Asai, M. Tanaka
Publikováno v:
Scopus-Elsevier
Al/sub 0.26/Ga/sub 0.74/N/AlN/GaN heterostructures with a 1-nm-thick AIN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::445403d33b8671cb7262d8e9b23f407b
https://doi.org/10.1109/iedm.2004.1419366
https://doi.org/10.1109/iedm.2004.1419366
Autor:
A. Imanish, Takashi Egawa, Hiroyasu Ishikawa, M. Tanaka, Osamu Oda, Tomohiko Shibata, Makoto Miyoshi, M. Mouri, Keiichiro Asai
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
A/sub 0.26/Ga/sub 0.74/N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50f491b3995f916050085ec280e7ea0
https://doi.org/10.1109/csics.2004.1392534
https://doi.org/10.1109/csics.2004.1392534
Autor:
Masahiro Sakai, S Sumiya, Keiichiro Asai, Osamu Oda, M Umeno, T Jimbo, Hiroyasu Ishikawa, Tomohiko Shibata, Yoshitaka Kuraoka, M Tanaka, T Egawa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e487cb36484175c27eb3aaf0cd8889
https://doi.org/10.1201/9781482268980-112
https://doi.org/10.1201/9781482268980-112
Autor:
Hideto Miyake, Osamu Oda, Tomohiko Shibata, Shigeaki Sumiya, Kazumasa Hiramatsu, Keiichiro Asai, Mitsuhiro Tanaka, Teruyo Nagai
Publikováno v:
MRS Proceedings. 693
This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc6a598cb8742a7b6938f90cb983cdf
https://doi.org/10.1557/proc-693-i9.3.1
https://doi.org/10.1557/proc-693-i9.3.1