Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Keiichi Miyairi"'
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 130:203-208
Fullerene (C60)-based n-channel field effect transistors (FETs) have been fabricated on various polymeric gate insulators as an alternative to conventional oxide gate insulators. The field effect mobility was improved to higher than 0.1cm2/Vs using p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fecdcf7a9afec566245bed5aaab6b75
https://doi.org/10.1541/ieejfms.130.203
https://doi.org/10.1541/ieejfms.130.203
Publikováno v:
Thin Solid Films. 518:810-813
We have investigated the sub-band gap states behaviors in P3HT MIS diodes and P3HT Schottky diode by the combination of C – V characteristics and the charge modulation spectroscopy (CMS) measurements. Single-layered heat-treated P3HT film sandwiche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3ac0ffeac792c15230c43ac1d41d38
https://doi.org/10.1016/j.tsf.2009.07.091
https://doi.org/10.1016/j.tsf.2009.07.091
Publikováno v:
Applied Surface Science. 255:1387-1390
In order to confirm the possibility that hydrogen in Ta film migrates during SIMS measurement, the influence of primary ion beam irradiation conditions on the depth profile of hydrogen in a Ta film was investigated. Deuterium implanted in a Ta2O5/Ta/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e60a3103dc03ffe346ffa535d8a872d
https://doi.org/10.1016/j.apsusc.2008.05.042
https://doi.org/10.1016/j.apsusc.2008.05.042
Publikováno v:
Japanese Journal of Applied Physics. 47:2016-2020
The field emission properties of a carboxylic-acid-terminated single-walled carbon nanotube (SWNT–COOH)/conducting polymer [poly(3-octylthiophene), P3OT] composite film prepared by ac-coupled electrophoresis have been investigated. It was found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949a5cb6cfcb9a52eb9255fc7b6859ea
https://doi.org/10.1143/jjap.47.2016
https://doi.org/10.1143/jjap.47.2016
Publikováno v:
Thin Solid Films. 516:2562-2567
We investigated the surface potential built across the electrode/fullerene (C 60 ) or copper phthalocyanine (CuPc) interface and C 60 /CuPc interface as a function of the thickness of the semiconductor film in the dark condition and under illuminatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc252a5e2e4d075cf6db3cd882efd0c
https://doi.org/10.1016/j.tsf.2007.04.101
https://doi.org/10.1016/j.tsf.2007.04.101
Publikováno v:
Thin Solid Films. 516:2568-2572
We investigated the electro-optical properties of the transmitted light in MIS capacitor consisting of P3HT/polyimide double-layered device by optical charge modulation spectroscopy (CMS) technique. A pronounced charge-induced subgap transition, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d534da4dd07776361d3b4e0be36fcd1
https://doi.org/10.1016/j.tsf.2007.04.102
https://doi.org/10.1016/j.tsf.2007.04.102
Publikováno v:
Japanese Journal of Applied Physics. 47:649-652
The hydrogen distribution in tantalum and tantalum oxide thin films has been examined by secondary ion mass spectrometry (SIMS). Tantalum and tantalum oxide thin films implanted with deuterium were analyzed by conventional SIMS. Metal–insulator–m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::762d0857a36d0f27415f212a59f5b131
https://doi.org/10.1143/jjap.47.649
https://doi.org/10.1143/jjap.47.649
Publikováno v:
Japanese Journal of Applied Physics. 47:509-512
We have prepared a photovoltaic device consisting of poly[2-methoxy,5-(2'-ethyl-hexyloxy)-p-phenylenevinylene] (MEHPPV) and an n-type crystalline TiO2 (anatase) thin film by high-temperature process and low-temperature process at a temperature lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80d4afd23cb70bb134ffcdfcfad1b6f
https://doi.org/10.1143/jjap.47.509
https://doi.org/10.1143/jjap.47.509
Publikováno v:
Japanese Journal of Applied Physics. 47:480-483
Fullurence (C60)-based n-channel field effect transistors (FETs) have been fabricated on polyimide gate insulators as an alternative to conventional oxide gate insulators. The field effect mobility µe of C60 FET was improved to higher than 0.1 cm2 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdbc13966d4c186754cdf1b6584357a
https://doi.org/10.1143/jjap.47.480
https://doi.org/10.1143/jjap.47.480
Publikováno v:
Thin Solid Films. 499:369-373
We have investigated the photovoltaic properties of organic p-n heterojunction photovoltaic cells consisting of p-type zinc (or copper) phthalocyanine (ZnPc, CuPc) and various dye materials, such as tetrapyridyl porphyrin (H 2 TPyP), DCM, Coumarin6,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289f2cfba0c7de678ac52fffac89d1ce
https://doi.org/10.1016/j.tsf.2005.07.027
https://doi.org/10.1016/j.tsf.2005.07.027