Zobrazeno 1 - 10
of 620
pro vyhledávání: '"Kei May LAU"'
Publikováno v:
APL Materials, Vol 12, Iss 11, Pp 111101-111101-12 (2024)
Selective area heteroepitaxy provides an alternate solution for the monolithic integration of high-performance III-V lasers on Si with effective management of crystalline defects. Here, we report large-area single-crystal InP grown on (001) patterned
Externí odkaz:
https://doaj.org/article/7402cdc082ea444daad785a4413c5f07
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 318-321 (2024)
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 $\
Externí odkaz:
https://doaj.org/article/ba973af1a55f4af3988a3ac38c75d29c
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-9 (2023)
Abstract A prototype of full-color active-matrix micro-light-emitting diode (micro-LED) micro-display with a pixel density of 391 pixel per inch (ppi) using InGaN/AlGaInP heterogeneous integration is demonstrated. InGaN blue/green dual-color micro-LE
Externí odkaz:
https://doaj.org/article/b161bda6b2f74f35a4cf85efcfa5fa65
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 540-546 (2022)
A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage
Externí odkaz:
https://doaj.org/article/ddd1e7abb61943f79eb6db1a29c14367
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-10 (2021)
A monolithic InP/SOI platform with dislocation-free, site-controlled and in-plane InP sub-micron wire and large dimension InP membrane array selectively grown on (001) SOI platform.
Externí odkaz:
https://doaj.org/article/e2487763245b460caba4154f5e91c7ff
Publikováno v:
AIP Advances, Vol 12, Iss 2, Pp 025315-025315-6 (2022)
Reliable lasers on Si with large bandwidth are desirable for high-performance data communication systems on Si-photonics platforms. Here, we report short optical pulses generated by gain-switched InP-based 1.55 µm quantum dash (Qdash) lasers directl
Externí odkaz:
https://doaj.org/article/f4dd92e106544fb2b9942cb459347185
Autor:
Yangqian Wang, Yitian Gu, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 850-856 (2020)
Dynamic characteristics of GaN HEMT grown on a native substrate were systematically investigated at 300K and 150K. Transfer and output characteristics of the GaN HEMT were measured after various off-state stressing conditions and recovery durations.
Externí odkaz:
https://doaj.org/article/0c53cace7aee4e3c9a8b607338169ae3
Publikováno v:
Materials Research Express, Vol 7, Iss 11, p 115903 (2020)
An investigation of self-assembled polar InGaN quantum dots (QDs) on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) is reported. The radiative exciton lifetime is measured by time-resolved photoluminescence at a low te
Externí odkaz:
https://doaj.org/article/dbce233430ec47f098d7ebaa8356b60c
Autor:
Yangfeng Li, Zijing Jin, Yu Han, Chunyu Zhao, Jie Huang, Chak Wah Tang, Jiannong Wang, Kei May Lau
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015903 (2019)
The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been
Externí odkaz:
https://doaj.org/article/68261742b013488492a1e96c306db704
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
Externí odkaz:
https://doaj.org/article/5fcdf8bc5b69482eba0478da4d5f9405