Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kei Kosaka"'
Autor:
Kei Kosaka, Mitsuhiro Tanaka, Shigeaki Sumiya, Makoto Miyoshi, Jicai Zhang, Tomohiko Shibata, Takashi Egawa, Youhua Zhu
Publikováno v:
Japanese Journal of Applied Physics. 47:43-46
AlGaN films and deep ultraviolet light-emitting diode (UV-LED) structures with AlGaN multi-quantum wells (MQWs) were grown directly on 2-in.-diameter epitaxial AlN/sapphire template (AlN template) by metalorganic chemical vapor deposition (MOCVD). It
Publikováno v:
Physical Review B. 82
Publikováno v:
Physical Review B. 81
We have investigated the NMR properties of dilute $^{3}\text{H}\text{e}$ impurities in solid $^{4}\text{H}\text{e}$ contained in a torsional oscillator (TO) by the simultaneous measurement of the NMR and the torsional oscillator response of the so-ca
Autor:
T. Sota, Kei Kosaka, Tomohiko Shibata, Akira Uedono, Mitsuhiro Tanaka, Takeyoshi Onuma, Koyu Asai, Shigefusa F. Chichibu, Shigeaki Sumiya
Publikováno v:
Journal of Applied Physics. 105(2):023529-023529-7
Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2O3 substrates. A few free and four bound excito
Autor:
Rajat Sharma, Umesh K. Mishra, Kei Kosaka, John F. Kaeding, Keiichiro Asai, Takeyoshi Onuma, Hirokatsu Ikeda, Tomohiko Shibata, Mitsuhiro Tanaka, Takayuki Sota, James S. Speck, Takuya Hoshi, T. Koyama, Stacia Keller, Kodai Matsukawa, Steven P. DenBaars, P. Cantu, Shuji Nakamura, Mariko Sugawara, Shigefusa F. Chichibu, Takahiro Okamura, Shigeaki Sumiya
Publikováno v:
Journal of Applied Physics. 103:089901
Autor:
Shigeaki Sumiya, Kei Kosaka, Tomohiko Shibata, Youhua Zhu, M. Tanaka, Makoto Miyoshi, Jicai Zhang, T. Egawa
Publikováno v:
Electronics Letters. 44:493
AlGaN-based multiple-quantum-well light-emitting diodes (LEDs) with peak emission at UV-C region of 264 nm were successfully gown on AlN template using metal organic chemical vapour deposition. It was found that a subband emission around 320 nm can b
Autor:
Rajat Sharma, Umesh K. Mishra, Kei Kosaka, John F. Kaeding, Keiichiro Asai, Takeyoshi Onuma, Hirokatsu Ikeda, Tomohiko Shibata, Mitsuhiro Tanaka, Takayuki Sota, James S. Speck, Takuya Hoshi, T. Koyama, Stacia Keller, Kodai Matsukawa, Steven P. DenBaars, P. Cantu, Shuji Nakamura, Mariko Sugawara, Shigefusa F. Chichibu, Takahiro Okamura, Shigeaki Sumiya
Publikováno v:
Journal of Applied Physics. 102:123707
The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band par