Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kei Ashiba"'
Autor:
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065126-065126-7 (2020)
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MR
Externí odkaz:
https://doaj.org/article/9db0c142201441b484607d353f364125
Autor:
Dong Won Kim, Woo Seok Yi, Jin Young Choi, Kei Ashiba, Jong Ung Baek, Han Sol Jun, Jae Joon Kim, Jea Gun Park
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resi
Externí odkaz:
https://doaj.org/article/c59e2334f1be4a29adb6a1da731f6785
Publikováno v:
IEEE Magnetics Letters. 10:1-5
A novel perpendicular spin-transfer torque magnetic random-access memory spin valve with a memory-cell size below 20 nm × 20 nm and a thermal stability factor Δ of ~77 (10-year retention time) was designed by ferromagnetically coupling a multiple f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98f3ead2ce10ec46c98840e27d83a614
https://doi.org/10.1109/lmag.2019.2939739
https://doi.org/10.1109/lmag.2019.2939739
Autor:
Kei Ashiba, Woo Seok Yi, Jea-Gun Park, Jong Ung Baek, Han Sol Jun, Jin Young Choi, Jae-Joon Kim, Dong Won Kim
Publikováno v:
Frontiers in Neuroscience
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in Neuroscience, Vol 14 (2020)
A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18de0d27181d2802088634f9f7fc3e8b
https://doi.org/10.3389/fnins.2020.00309
https://doi.org/10.3389/fnins.2020.00309
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9481f3f55c11b7806c092a59957a612
https://pubmed.ncbi.nlm.nih.gov/31417114
https://pubmed.ncbi.nlm.nih.gov/31417114
Autor:
Han-Sol Jun, Miri Park, Sunhwa Jung, Jin-Young Choi, Kei Ashiba, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park
Publikováno v:
ECS Meeting Abstracts. :877-877
These days dynamic-random-access-memory (DRAM) fabrication to scale down under 10-nm is complex which leads to high cost [1]. On the other hand, perpendicular spin-transfer-torque magnetic random access memory (p-STT MRAM) cell has a possibility of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac30e21f46176346cc8324ad5173eb41
https://doi.org/10.1149/ma2019-02/13/877
https://doi.org/10.1149/ma2019-02/13/877