Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kei Ashiba"'
Autor:
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065126-065126-7 (2020)
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MR
Externí odkaz:
https://doaj.org/article/9db0c142201441b484607d353f364125
Autor:
Dong Won Kim, Woo Seok Yi, Jin Young Choi, Kei Ashiba, Jong Ung Baek, Han Sol Jun, Jae Joon Kim, Jea Gun Park
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resi
Externí odkaz:
https://doaj.org/article/c59e2334f1be4a29adb6a1da731f6785
Publikováno v:
IEEE Magnetics Letters. 10:1-5
A novel perpendicular spin-transfer torque magnetic random-access memory spin valve with a memory-cell size below 20 nm × 20 nm and a thermal stability factor Δ of ~77 (10-year retention time) was designed by ferromagnetically coupling a multiple f
Autor:
Kei Ashiba, Woo Seok Yi, Jea-Gun Park, Jong Ung Baek, Han Sol Jun, Jin Young Choi, Jae-Joon Kim, Dong Won Kim
Publikováno v:
Frontiers in Neuroscience
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in Neuroscience, Vol 14 (2020)
A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resi
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operat
Autor:
Han-Sol Jun, Miri Park, Sunhwa Jung, Jin-Young Choi, Kei Ashiba, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park
Publikováno v:
ECS Meeting Abstracts. :877-877
These days dynamic-random-access-memory (DRAM) fabrication to scale down under 10-nm is complex which leads to high cost [1]. On the other hand, perpendicular spin-transfer-torque magnetic random access memory (p-STT MRAM) cell has a possibility of h
Autor:
Jun, Han-Sol, Choi, Jin-Young, Ashiba, Kei, Jung, Sun-Hwa, Park, Miri, Baek, Jong-Ung, Shim, Tae-Hun, Park, Jea-Gun
Publikováno v:
AIP Advances; Jun2020, Vol. 10 Issue 6, p1-7, 7p
Autor:
Kim, Dong Won, Yi, Woo Seok, Choi, Jin Young, Ashiba, Kei, Baek, Jong Ung, Jun, Han Sol, Kim, Jae Joon, Park, Jea Gun
Publikováno v:
Frontiers in Neuroscience; 4/30/2020, Vol. 14, p1-9, 9p
Autor:
Choi, Jin-Young1, Jun, Hansol2, Ashiba, Kei1,3, Baek, Jong-Ung2, Shim, Tae-Hun1, Park, Jea-Gun1,2 parkjgl@hanyang.ac.kr
Publikováno v:
Scientific Reports. 8/15/2019, Vol. 9 Issue 1, pN.PAG-N.PAG. 1p.
Autor:
Jong Ung Baek, Hansol Jun, Jea-Gun Park, Jichan Kim, Tae-Hun Shim, Hyunkyu Lee, Jin-Young Choi, Miri Park
Publikováno v:
ECS Meeting Abstracts. :2041-2041
The application fields of artificial intelligence (AI) has been widely expanded; security, finance, health care, etc. A conventional neuromorphic chips for AI has been fabricated with synapse array and neuron integration using C-MOSFET technology, ha