Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Keh-Chung Wang"'
Autor:
Ming-Liang Wei, Hang-Ting Lue, Shu-Yin Ho, Yen-Po Lin, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Yung-Chun Li, Teng-Hao Yeh, Shih-Hung Chen, Yi-Hao Jhu, Hsiang-Pang Li, Han-Wen Hu, Chun-Hsiung Hung, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f60ad8ecdf1157c488a000d962a1fb
https://doi.org/10.1109/iedm45625.2022.10019495
https://doi.org/10.1109/iedm45625.2022.10019495
Autor:
Wei-Chen Chen, Hang-Ting Lue, Meng-Yan Wu, Teng-Hao Yeh, Pei-Ying Du, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf43e1acba592a9aba4b0e784feaf95
https://doi.org/10.1109/iedm45625.2022.10019464
https://doi.org/10.1109/iedm45625.2022.10019464
Autor:
Po-Hao Tseng, Yu-Hsuan Lin, Tian-Cih Bo, Feng-Ming Lee, Yu-Yu Lin, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383940e7232d41d9f5da93fbde170718
https://doi.org/10.1109/iedm45625.2022.10019556
https://doi.org/10.1109/iedm45625.2022.10019556
Autor:
Han-Wen Hu, Wei-Chen Wang, Yuan-Hao Chang, Yung-Chun Lee, Bo-Rong Lin, Huai-Mu Wang, Yen-Po Lin, Yu-Ming Huang, Chong-Ying Lee, Tzu-Hsiang Su, Chih-Chang Hsieh, Chia-Ming Hu, Yi-Ting Lai, Chung-Kuang Chen, Han-Sung Chen, Hsiang-Pang Li, Tei-Wei Kuo, Meng-Fan Chang, Keh-Chung Wang, Chun-Hsiung Hung, Chih-Yuan Lu
Publikováno v:
2022 55th IEEE/ACM International Symposium on Microarchitecture (MICRO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084cfe9ea829c98a40be4378600d1d25
https://doi.org/10.1109/micro56248.2022.00058
https://doi.org/10.1109/micro56248.2022.00058
Autor:
Po-Hao Tseng, Yu-Hsuan Lin, Feng-Ming Lee, Tian-Cig Bo, Yung-Chun Li, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcf21c0f48d7fceae6fcc9ccbd04ed7
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830405
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830405
Autor:
Hang-Ting Lue, Chung-Hao Fu, Tzu-Hsuan Hsu, Ming-Liang Wei, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77f3077057b21230046c71dd06348f5
https://doi.org/10.1109/snw56633.2022.9889068
https://doi.org/10.1109/snw56633.2022.9889068
Publikováno v:
IEEE Transactions on Electron Devices. 68:1593-1597
We report an ReRAM-based pseudo-true random number generator (RNG) which can significantly improve the security feature of e-ReRAM chips at a very low cost. Combining the true randomness from stochastic behavior of ReRAM and the high output speed fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb75aefee6fe0e232bf569f872a2813
https://doi.org/10.1109/ted.2021.3057028
https://doi.org/10.1109/ted.2021.3057028
Autor:
Yun-Yuan Wang, Yu-Hsuan Lin, Dai-Ying Lee, Cheng-Hsien Lu, Ming-Liang Wei, Po-Hao Tseng, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1085
We proposed an in-memory spin coupler based on the 55 nm NOR flash technology to tackle the combinatorial optimization problems. The high-density and cost-effective floating-gate (FG) devices can overcome the capacity limitation in the conventional a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35744ee64a3cc9c97dedf44e0a500531
https://doi.org/10.35848/1347-4065/acbc2c
https://doi.org/10.35848/1347-4065/acbc2c
Autor:
Chia-Jung Chiu, Chih-Yuan Lu, Tzu-Hsuan Hsu, Keh-Chung Wang, Teng-Hao Yeh, Wei-Chen Chen, Pei-Ying Du, Lou Lee, Hang-Ting Lue
Publikováno v:
IEEE Transactions on Electron Devices. 67:5362-5367
A novel double-density hemi-cylindrical (HC) structure 3-D NAND Flash architecture was demonstrated (Lue et al. , 2019). HC 3-D NAND squeezes the gate-all-around (GAA) hole in one direction, followed by a slit cut to split the GAA device to produce t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e42d473495d7a7236d182b620052b4c
https://doi.org/10.1109/ted.2020.3029999
https://doi.org/10.1109/ted.2020.3029999
Autor:
Yu-Hsuan Lin, Po-Hao Tseng, Feng-Min Lee, Ming-Hsiu Lee, Chih-Chang Hsieh, Dai-Ying Lee, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2fb6cc731f6f487f7fd382d69128fad
https://doi.org/10.1109/imw52921.2022.9779250
https://doi.org/10.1109/imw52921.2022.9779250