Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kefeng Dai"'
Publikováno v:
Crystals, Vol 13, Iss 2, p 193 (2023)
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the
Externí odkaz:
https://doaj.org/article/b2274110c1704306adde97f0a2bf7953
Autor:
Juanjuan Jiang, Kefeng Dai
Publikováno v:
2021 IEEE Conference on Telecommunications, Optics and Computer Science (TOCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee1e07ce1358ad398b6117376baab93
https://doi.org/10.1109/tocs53301.2021.9688668
https://doi.org/10.1109/tocs53301.2021.9688668