Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kefang Qian"'
Autor:
Kefang Qian, Libo Qian
Publikováno v:
Applied Sciences, Vol 10, Iss 22, p 8275 (2020)
Inductor integration is of vital importance for miniaturization of power supply on chips. In this paper, a backside integrated power inductor is presented. The inductor is placed at the backside of a silicon interposer and connected to the front side
Externí odkaz:
https://doaj.org/article/ee7e4c4e58a7431ba059cc3220931ca3
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 68:1832-1836
To improve the misalignment tolerance for inductive power transfer (IPT) systems in implantable medical devices, like retinal prosthesis, a 3-D through silicon via (TSV) based orthogonal receiving coil is proposed in this brief. The mutual inductance
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 67:2943-2947
A fast transient response digital low dropout (LDO) regulator with a low quiescent current is proposed for power management applications in a self-powered wireless sensor system. The digital LDO incorporates both bisection method (BM) and steady-stat
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. :1-1
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1947-1951
Using coaxial through-silicon technologies, a new 3-D capacitor integrated on a silicon interposer is proposed. The capacitance of coaxial through silicon via (CTSV) capacitors is extracted, analyzed, and compared. The results obtained from the analy
Autor:
Libo Qian, Kefang Qian
Publikováno v:
Applied Sciences
Volume 10
Issue 22
Applied Sciences, Vol 10, Iss 8275, p 8275 (2020)
Volume 10
Issue 22
Applied Sciences, Vol 10, Iss 8275, p 8275 (2020)
Inductor integration is of vital importance for miniaturization of power supply on chips. In this paper, a backside integrated power inductor is presented. The inductor is placed at the backside of a silicon interposer and connected to the front side
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 8:1336-1343
Based on the extracted resistance, inductance, capacitance, and conductance parameters, this paper introduces the distributed transmission line model of silicon-core coaxial through-silicon vias (CTSVs), in which the vertical interconnect is made of
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
Due to high loss tangent and low electrical loss, glass interposer is a good candidate for integrated passive devices development. In this paper, a 3-D transformer is established and analyzed. It demonstrates that the proposed transformer greatly ben
Publikováno v:
Journal of Applied Physics. 129:014901
Polarization converters based on metasurfaces are one of the recently developed metadevices that can change the polarization state with designated modes, utilizing the sub-wavelength unit construction. In this paper, a kind of planar zigzag asymmetri
Publikováno v:
ISCAS
This paper models and studies silicon-core coaxial through silicon vias (CTSVs), in which the metal via is replaced with a Cu coated silicon pole. Based on the physical structure of CTSVs, the impact of various design parameters on the electrical per