Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Keeya Madani"'
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc113039e77b9f9b7644c3b79141825
https://doi.org/10.1109/pvsc48317.2022.9938560
https://doi.org/10.1109/pvsc48317.2022.9938560
Publikováno v:
IEEE Journal of Photovoltaics. 11:268-272
Carrier selective poly-Si/SiO x contacts have become a very strong contender for next generation high-efficiency Si solar cells as well as Si-based tandem cells. A thin unmetallized poly-Si/SiO x passivated contact on the top surface of the bottom Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa27c47fd935285729a1fb3411b83bec
https://doi.org/10.1109/jphotov.2020.3043259
https://doi.org/10.1109/jphotov.2020.3043259
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893850c5571fcbf4cf7ee15556e53f77
https://doi.org/10.1109/pvsc43889.2021.9518628
https://doi.org/10.1109/pvsc43889.2021.9518628
Autor:
Aditi Jain, Sungjin Choi, Vijaykumar D. Upadhyaya Min Gu Kang, Keeya Madani, Ajeet Rohatgi, Young-Woo Ok, Ying-Yuan Huang, Wookjin Choi
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
This paper presents fabrication and optimization of p+ passivating contact (p+ poly-Si/SiOx/c-Si) for high efficiency p-TOPCon solar cells. The p+ passivating contacts were formed by (i) in-situ doped p+ poly-Si via LPCVD and (ii) ex-situ doping of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eb29acaa9c65ce93838e5d060b33f3
https://doi.org/10.1109/pvsc43889.2021.9518759
https://doi.org/10.1109/pvsc43889.2021.9518759
Autor:
Keeya Madani, Ajay Upadhyaya, Brian Rounsaville, Ying-Yuan Huang, Ajeet Rohatgi, Vijaykumar Upadhyaya
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
This paper describes the development of a novel selective boron emitter formed a screen-printed negative resist to form vias for heavily doping regions. Ion-implantation and atmospheric pressure chemical vapor deposition (APCVD) are used to from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e18f34ca008601523d666a6ebe61b92
https://doi.org/10.1109/pvsc45281.2020.9300546
https://doi.org/10.1109/pvsc45281.2020.9300546
Publikováno v:
Current Applied Physics. 18:231-235
We present the fabrication and analysis of Passivated Emitter and Rear Totally Diffused (PERT) solar cells on n-type silicon using a co-diffusion process. In a single high temperature step, a BSG/SiOx stack deposited by APCVD and a POCl3 back surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03b271e15f27028385604936df29379
https://doi.org/10.1016/j.cap.2017.11.004
https://doi.org/10.1016/j.cap.2017.11.004
Autor:
Brian Rounsaville, Vijay Upadhyaya, Keeya Madani, Wookjin Choi, Young-Woo Ok, Ajay Upadhyaya, Ajeet Rohatgi, Ying-Yuan Huang, Vinodh Chandrasekaran
Publikováno v:
Solar Energy Materials and Solar Cells. 230:111183
We report on the understanding and optimization of ion-implanted boron emitters in combination with screen-printed contacts to produce very low recombination current density and high-efficiency cells with rear poly-Si/SiO2 passivated contact. Due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ec1a19ceef6110b2811fda23a4e55d
https://doi.org/10.1016/j.solmat.2021.111183
https://doi.org/10.1016/j.solmat.2021.111183
Autor:
Armin Richter, Yuguo Tao, Andrew M. Tam, Keeya Madani, Young-Woo Ok, Brian Rounsaville, Martin Hermle, Ajeet Rohatgi, Jan Benick, Francesco Zimbardi, Ajay Upadhyaya
Publikováno v:
IEEE Journal of Photovoltaics. 7:1236-1243
This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the bac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d577e65b2b672016d87e3e2ecb3a80a9
https://doi.org/10.1109/jphotov.2017.2715720
https://doi.org/10.1109/jphotov.2017.2715720
Autor:
Vijaykumar Upadhyaya, Keeya Madani, Young-Woo Ok, Ajay Upadhyaya, Ajeet Rohatgi, Ying-Yuan Huang
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si rear contact for high-efficiency front junction crystalline Si solar cells. Using a 15A thick tunnel oxide grown in nitric acid at 100°C and capped w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb65989243f9a9d1ba0413c8cc7b010
https://doi.org/10.1109/pvsc40753.2019.8980527
https://doi.org/10.1109/pvsc40753.2019.8980527