Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Keenan N. Woods"'
Publikováno v:
ACS Applied Materials & Interfaces. 12:1241-1249
An aqueous solution approach has been utilized to prepare nanolaminates of TiO2 and ionically conductive Li2O-Al2O3 (LiAlO). This new approach utilizes low curing temperatures, resulting in fully oxidized films as demonstrated by Fourier-transform in
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 50(48)
The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340 °C for pulse times
Autor:
Keenan N. Woods, Catherine J. Page, Shannon W. Boettcher, Elizabeth A. Cochran, Darren W. Johnson
Publikováno v:
Journal of Materials Chemistry A. 7:24124-24149
Metal-oxide thin films are used extensively in electronic and energy applications. Solution processing offers a potentially scalable and inexpensive deposition method to expand the applications of metal-oxide films and to complement vacuum-deposition
Autor:
Catherine J. Page, Shannon W. Boettcher, Zayd L. Ma, Sophia E. Hayes, Douglas A. Keszler, Keenan N. Woods, Cory K. Perkins, Jinlei Cui, Yvonne Afriyie, Blake A. Hammann, Matthew G. Kast, Paul N. Plassmeyer
Publikováno v:
Chemistry of Materials. 30:7456-7463
Here, we employ a combination of 27Al solid-state nuclear magnetic resonance (SSNMR) and conventional spectroscopic and microscopic techniques to investigate the structural evolution of aqueous aluminum precursors to a uniform and smooth aluminum oxi
Publikováno v:
ACS applied materialsinterfaces. 12(1)
An aqueous solution approach has been utilized to prepare nanolaminates of TiO
Publikováno v:
Solid State Sciences. 75:34-38
Miniaturization of microelectronic devices has reached a fundamental scaling limit; parasitic electron tunneling through the ultrathin gate dielectric has become a major obstacle to continued device performance. One method for overcoming this limitat
Autor:
Douglas A. Keszler, Deok-Hie Park, Paul N. Plassmeyer, Catherine J. Page, Keenan N. Woods, Shannon W. Boettcher, Lisa J. Enman, Brenna L. Kirk, Aidan K. Grealish
Publikováno v:
Chemistry of Materials. 29:8531-8538
Aqueous solution deposition has emerged as a potentially scalable, high-throughput route to functional metal oxide thin films. Aqueous routes, however, generally require elevated processing temperatures to produce fully condensed films that are resis
Autor:
David W. Johnson, Paul N. Plassmeyer, Catherine J. Page, David A. Marsh, Keenan N. Woods, Suzannah R. Wood, Kirsten M. Ø. Jensen, Darren W. Johnson
Publikováno v:
Journal of the American Chemical Society. 139:5607-5613
Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gal
Autor:
Tsung-Han Chiang, Paul N. Plassmeyer, Keenan N. Woods, Catherine J. Page, Shannon W. Boettcher, Matthew G. Kast, Aidan K. Grealish, Alexander C. Lygo
Publikováno v:
ACS Applied Materials & Interfaces. 9:10897-10903
Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal–insulator–semiconductor (MIS) field-effect transistors. Although thin-fil
Autor:
B. A. Duell, E. A. Bryan, Catherine J. Page, Shannon W. Boettcher, T. S. Gleckler, D. P. Nguyen, C. A. Crump, Keenan N. Woods, E. C. Waddington, M. R. Nellist
Publikováno v:
RSC Advances. 7:39147-39152
Zirconium oxide has received considerable attention as a dielectric component for microelectronic applications. However, crystallization at relatively low temperatures results in the formation of grain boundaries and high leakage current densities. D