Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Keeho Kim"'
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42fe320910cedcfacfa97c3f4817dc2
https://doi.org/10.1117/12.2657959
https://doi.org/10.1117/12.2657959
Autor:
Wenwen Zhang, Ken Chen, Xiaomei Li, Yuansheng Ma, Cynthia Zhu, Baron Chen, Xing Gao, Keeho Kim
Publikováno v:
2021 International Workshop on Advanced Patterning Solutions (IWAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca4c2876545fec5670e4d36e3dc1beec
https://doi.org/10.1109/iwaps54037.2021.9671068
https://doi.org/10.1109/iwaps54037.2021.9671068
Autor:
Haiwon Lee, Y. Song, Keeho Kim, Sung Kyeong Kim, Hyoun Woo Kim, S. Yun, Moon-Keun Lee, Hyunjung Shin
Publikováno v:
Chemical Physics Letters. 566:44-49
Atomic force microscope oxidation lithography was used to study the effects of low-energy ion beams on a silicon substrate. The oxygen containing layer formed by H + ion beam irradiation was characterized by Kelvin probe force microscopy. Giant oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d551659a0feab1ee6b01f16dcd67d7
https://doi.org/10.1016/j.cplett.2013.02.054
https://doi.org/10.1016/j.cplett.2013.02.054
Publikováno v:
Thin Solid Films. 516:3761-3766
The effect of thiourea on copper deposition onto a copper seed layer from an electrolyte composed of CuSO 4 , H 2 SO 4 , deionized water, and thiourea was investigated. Even in the presence of very low concentrations of thiourea, extremely smooth and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc67dece1bd13aebc6a570654c37550e
https://doi.org/10.1016/j.tsf.2007.06.069
https://doi.org/10.1016/j.tsf.2007.06.069
Publikováno v:
Microelectronic Engineering. 85:621-624
The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b1922fdff320d63b8af9e4be8541c3
https://doi.org/10.1016/j.mee.2007.11.006
https://doi.org/10.1016/j.mee.2007.11.006
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc662b8467894843fae89ff7529da910
https://doi.org/10.1016/j.mee.2007.06.016
https://doi.org/10.1016/j.mee.2007.06.016
Autor:
Dae Kyu Choi, Sung Kyeong Kim, Chin-Wook Chung, Jong Woo Lee, Jae Min Myoung, Jeong Yeol Jang, Geun Young Yeom, Tae Ho Yoon, Hyoun Woo Kim, Hyungsun Kim, Hyoung June Kim, Ju Hyun Myung, Keeho Kim
Publikováno v:
Journal of Materials Science. 41:5040-5042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::134fe783e55bf933b160144c1e09111b
https://doi.org/10.1007/s10853-006-0132-6
https://doi.org/10.1007/s10853-006-0132-6
Publikováno v:
SPIE Proceedings.
The methodology of lithography friendly design (LFD) has been widely adopted since it dramatically reduces cycle of design revision as well as number of learning cycles to reach acceptable yield. LFD is, for example, the reduction number of small jog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018a217d740af435f31d247f3b2e20b9
https://doi.org/10.1117/12.746811
https://doi.org/10.1117/12.746811
Publikováno v:
SPIE Proceedings.
In low-k1 imaging lithography process it is difficult to make the accurate OPC model not only because of factors caused by unstable process such as large CD (Critical Dimension) variation, large MEEF (Mask Error Enhancement Factor) and very poor proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a206bc94f0792043a5fbafc4fd63a0ba
https://doi.org/10.1117/12.746821
https://doi.org/10.1117/12.746821
Publikováno v:
SPIE Proceedings.
Deep-UV (DUV) lithography has been developed to define minimum feature sizes of sub-100 nm dimensions of devices semiconductor. In response to this trend, DUV mask technology has been proposed as an effective technique for considering the reduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7834c13386c3d746ad6be035829393db
https://doi.org/10.1117/12.712038
https://doi.org/10.1117/12.712038