Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kee Jeung Lee"'
Autor:
Seung-Joon Jeon, Jang Won Oh, Kyungjoon Baek, Kee Jeung Lee, Won Kim, Sung Kyu Son, Jong Hee Yoo, Kyung Song, Sang Ho Oh
Publikováno v:
Nanoscale Advances. 2:3841-3848
The reliability of Ge–Sb–Te phase-change memory (PCM) devices has been limited by failure due to void formation and this still remains one of the critical issues affecting their use in storage-class memory applications. To directly observe the vo
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:560-565
Autor:
Sang Ho Oh, Kyungjoon Baek, Sung Kyu Son, Kyung Song, Jang Won Oh, Seung-Joon Jeon, Won Kim, Jong Hee Yoo, Kee Jeung Lee
Publikováno v:
Nanoscale Advances; Sep2020, Vol. 2 Issue 9, p3841-3848, 8p
Autor:
Hyun Sun Lee, Tae Jung Ha, Hoe Gwon Jung, Yoocharn Jeon, Sung Joo Hong, Kyu Sung Kim, Suock Chung, Wan Gee Kim, Hyeong Soo Kim, Lee Jung Hoon, Gary Gibson, Eung Rim Hwang, Jong Hee Yoo, Kyung Wan Kim, Kee Jeung Lee, Soo Gil Kim, Suk Pyo Song, Hyojin Kim, Seonghyun Kim, Ja Chun Ku, Jong Il Kim, Jong Chul Lee, Sang Hoon Cho, Jae-yeon Lee, Jong Ho Song, Jong Ho Kang, Beom-Yong Kim, Jung Ho Shin, Yong Taek Park
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and
Autor:
Suock Chung, Tae Hyung Park, Beom-Yong Kim, Byung Joon Choi, Kee Jeung Lee, Kyung-min Kim, Cheol Seong Hwang, Seul Ji Song, Soo Gil Kim, Hae Jin Kim
Publikováno v:
SCIENTIFIC REPORTS(5)
Scientific Reports
Scientific Reports
Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5–2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36b079b845e01fd19ac3bd24b907e4be
http://open-repository.kisti.re.kr/cube/handle/open_repository/486214.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/486214.do
Autor:
Hyo June Kim, Hyun Min Lee, Wan Gee Kim, R. Stanley Williams, Lee Jung Hoon, Jianhua Yang, Ha Chang Jung, Beom-Yong Kim, Tae Geun Seong, Hyeong Soo Kim, Yoocharn Jeon, Jong Hee Yoo, Seonghyun Kim, Hyung Dong Lee, Kyoo Ho Jung, Seok-Hee Lee, Kee Jeung Lee, Soo Gil Kim, Suock Chung
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO 2 based-1S stacks with TiN based-electrode, the world's first and best bi
Publikováno v:
Korean Journal of Chemical Engineering. 13:489-495
In this study powders of high quality crystalline α-quartz were prepared by hydrothermal synthesis and parameters related to the preparation of the material were investigated. The degree of face development of the α-quartz crystal depended on the r
Publikováno v:
Japanese Journal of Applied Physics. 55:04EE09
We report, for the first time, the resistive switching properties of Si-doped Ta2O5 grown by atomic layer deposition (ALD). The reduced switching current, improved on/off current ratio, and excellent endurance property are demonstrated in the Si-dope
Autor:
Suock Chung, J. H. Lee, W. S. Nam, Janice H. Nickel, Hyunsang Hwang, Junkyo Suh, Kee-jeung Lee, Kwang-Ok Kim, Y. K. Kim, R.S. Williams, Yong Soo Kim, K. M. Rho, Ho-Seok Lee, Hyejung Choi, Sung Kye Park, H. S. Shin, K. Cho, J. T. Cheong, S. N. Park, S. Chae, Juyeab Lee, Kwon Hong, Sook-Joo Kim, Jianhua Yang, Seoung-Ju Chung, Seung Hwan Lee, Hyung Dong Lee, H. G. Jeong, C. G. Lee, Y. S. Sohn, Hyeon-Koo Cho, E.-R. Hwang, Frederick A. Perner, Sung-Joo Hong, Jumsoo Kim
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
4F2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell are
Autor:
Bong-Seok Jeon, Beom-Yong Kim, Kee-jeung Lee, Seung-Mi Lee, Yun-Hyuck Ji, Sungki Park, Kwon Hong
Publikováno v:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
The origin of flat band voltage shift phenomena using arsenic ion-implant in High-k/Metal Inserted Poly Si (HK/MIPS) gate stacks was investigated. Arsenic ion-implantations were carried out on HfSiO and HfSiON dielectric layers. Precise arsenic profi