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pro vyhledávání: '"Kechuang Lin"'
Autor:
Enming Zhang, Yue Zeng, Wenyu Kang, Zhibai Zhong, Yushou Wang, Tongwei Yan, Shaohua Huang, Zhongying Zhang, Kechuang Lin, Junyong Kang
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 11, Pp n/a-n/a (2024)
Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates
Externí odkaz:
https://doaj.org/article/a48baf042cbd46ffbbe1125cf80290ba
