Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kechang Wang"'
Publikováno v:
Day 1 Mon, October 31, 2022.
This paper highlights the successful installation of a MultiLateral Technology (MLT) for the first time in an offshore field 40 km from Abu Dhabi. It will document the deployment of the deepest cemented MLT Level 5 globally, with improvements in well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbccabe749948c582f66d6b6b51868eb
https://doi.org/10.2118/211573-ms
https://doi.org/10.2118/211573-ms
Autor:
Linyong Pang, Ezequiel Vidal Russell, Bo Su, Ming-Chuan Yang, Ryan Pearman, Michael Lee, Ali Bouaricha, Kechang Wang, Aki Fujimura, Bill Baggenstoss, P. Jeffrey Ungar, Jennefir L. Digaum
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0637e388eb235c256745cae9a5092aba
https://doi.org/10.1117/1.jmm.20.4.041405
https://doi.org/10.1117/1.jmm.20.4.041405
Autor:
Linyong Pang, Lu Sha, Michael Pomerantsev, Ezequiel Vidal Russell, Ryan Pearman, Ali Bouaricha, Bo Su, Mike Meyer, Kechang Wang, Jennefir Ping Digaum, Mariusz Niewczas, Yang Lu, Ming-Chuan Yang, Michael Lee, Bill Baggenstoss, P. Jeffrey Ungar, Aki Fujimura
Publikováno v:
Photomask Technology 2020.
In advanced semiconductor memory manufacturing, mask and lithography are critical for patterning. In this paper we jointly study the benefits of a full-chip, curvilinear, stitchless inverse lithography technology (ILT) with mask-wafer cooptimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee10d415e2a027560f3cff2d34cebac
https://doi.org/10.1117/12.2579729
https://doi.org/10.1117/12.2579729
Autor:
Lu Sha, Ryan Pearman, Bo Su, Linyong Pang, Michael Pomerantsev, Ali Bouaricha, Kechang Wang, Mariusz Niewczas, P. Jeffrey Ungar, Aki Fujimura
Publikováno v:
Optical Microlithography XXXIII.
Since its introduction more than a decade ago, inverse lithography technology (ILT) has been seen as a promising solution to many of the challenges of advanced-node lithography. Numerous studies have demonstrated that curvilinear ILT mask shapes prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b6303a206e5b9ce9a2a971c6a946f7
https://doi.org/10.1117/12.2554867
https://doi.org/10.1117/12.2554867
Autor:
Ryan Pearman, Bo Su, Ming-Chuan Yang, Ali Bouaricha, Aki Fujimura, P. Jeffrey Ungar, Kechang Wang, Ezequiel Vidal Russell, Bill Baggenstoss, Michael Lee, Jennefir L. Digaum, Linyong Pang
Publikováno v:
Photomask Technology 2019.
In advanced semiconductor memory manufacturing, mask and lithography are critical for patterning. In this paper we jointly study the benefits of a mask and wafer co-design that utilizes a new extreme single instruction multiple data (SIMD) approach t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::164859511bb7366139b6f0328e1fd276
https://doi.org/10.1117/12.2534629
https://doi.org/10.1117/12.2534629
Autor:
Linyong (Leo) Pang, Russell, Ezequiel Vidal, Baggenstoss, Bill, Lee, Michael, Digaum, Jennefir, Ming-Chuan Yang, Ungar, P. Jeffrey, Bouaricha, Ali, Kechang Wang, Bo Su, Pearman, Ryan, Aki Fujimura
Publikováno v:
Proceedings of SPIE; 7/30/2019, Vol. 11148, p111480U-1-111480U-16, 16p
Publikováno v:
Analog Integrated Circuits and Signal Processing. 28:27-34
A current feedback op-amp (CFOA) has the advantage that feedback structures in current-mode circuits are more easily devised because the voltage buffer at the output of the CFOA does not load the output of the integral positive, second-generation cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9777f04a108f634306e3d0e10ae1debd
https://doi.org/10.1023/a:1011289618916
https://doi.org/10.1023/a:1011289618916
Autor:
Eric Guo, Linyong Pang, Steven Ho, Suresh Lakkapragada, Peter Hu, Vikram Tolani, Crystal Wang, Kechang Wang, Jiao Yu
Publikováno v:
SPIE Proceedings.
As optical lithography continues to extend into low-k1 regime, resolution of mask patterns continues to diminish. The adoption of RET techniques like aggressive OPC, sub-resolution assist features combined with the requirements to detect even smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f80cff932153d08de4c7282919cdb75
https://doi.org/10.1117/12.2030844
https://doi.org/10.1117/12.2030844
Autor:
Kaiming Chiang, Peter Hu, Danping Peng, Jiao Yu, Dongxue Chen, Bill Wang, Suresh Lakkapragada, Yan Zheng, T. H. Yen, George Hwa, Rick Lai, Kechang Wang, Laurent C. Tuo, Vikram Tolani
Publikováno v:
SPIE Proceedings.
As optical lithography continues to extend into low-k1 regime, resolution of mask patterns continue to diminish, and so do mask defect requirements due to increasing MEEF. Post-inspection, mask defects have traditionally been classified by operators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bbb1dd287ef760fb3b744fd9058f90
https://doi.org/10.1117/12.2031786
https://doi.org/10.1117/12.2031786
Autor:
Grace Dai, Peter Hu, Linyong Pang, Vikram Tolani, Ying Li, Suresh Lakkapragada, George Hwa, Kechang Wang, Lin He, Danping Peng
Publikováno v:
SPIE Proceedings.
As optical lithography continues to extend into low-k1 regime, resolution of mask patterns continues to diminish. The limitation of 1.35 NA posed by water-based lithography has led to the application of various resolution enhancement techniques (RET)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c6e929db9d7c34b1506b2d8b5d21ee4
https://doi.org/10.1117/12.977138
https://doi.org/10.1117/12.977138