Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Keane, Darragh"'
Focused ion beams (FIBs) are widely used to modify optoelectronic devices, but their utility is severely restricted in some III-V materials due to adverse effects such as nanofibre growth and contamination. This study describes an effective machining
Externí odkaz:
http://arxiv.org/abs/1906.05882
Autor:
Maguire, Pierce, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, Duesberg, Georg S., McEvoy, Niall, Zhang, Hongzhou
We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion micros
Externí odkaz:
http://arxiv.org/abs/1906.04850
Autor:
Maguire, Pierce, Downing, Clive, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, McManus, John B., Duesberg, Georg S., Nicolosi, Valeria, McEvoy, Niall, Zhang, Hongzhou
We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by
Externí odkaz:
http://arxiv.org/abs/1812.05543
Autor:
Jadwiszczak, Jakub, Keane, Darragh, Maguire, Pierce, Cullen, Conor P., Zhou, Yangbo, Song, Hua-Ding, Downing, Clive, Fox, Daniel S., McEvoy, Niall, Zhu, Rui, Xu, Jun, Duesberg, Georg S., Liao, Zhi-Min, Boland, John J., Zhang, Hongzhou
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching cir
Externí odkaz:
http://arxiv.org/abs/1811.09545
Autor:
Jadwiszczak, Jakub, O'Callaghan, Colin, Zhou, Yangbo, Fox, Daniel S., Weitz, Eamonn, Keane, Darragh, O'Reilly, Ian, Downing, Clive, Shmeliov, Aleksey, Maguire, Pierce, Gough, John J., McGuinness, Cormac, Ferreira, Mauro S., Bradley, A. Louise, Boland, John J., Nicolosi, Valeria, Zhang, Hongzhou
Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-d
Externí odkaz:
http://arxiv.org/abs/1706.08573
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier densities. Thes
Externí odkaz:
http://arxiv.org/abs/1611.04984
Autor:
Maguire, Pierce, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, Duesberg, Georg S., McEvoy, Niall, Zhang, Hongzhou
Publikováno v:
Journal of Applied Physics; 10/28/2019, Vol. 126 Issue 16, pN.PAG-N.PAG, 8p, 2 Diagrams, 2 Charts, 4 Graphs
Autor:
Maguire, Pierce, Downing, Clive, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, McManus, John B., Duesberg, Georg S., Nicolosi, Valeria, McEvoy, Niall, Zhang, Hongzhou
Publikováno v:
Journal of Applied Physics; 2019, Vol. 125 Issue 6, pN.PAG-N.PAG, 5p, 5 Graphs
Akademický článek
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Autor:
Jadwiszczak, Jakub, Keane, Darragh, Maguire, Pierce, Cullen, Conor P., Yangbo Zhou, Huading Song, Downing, Clive, Fox, Daniel, McEvoy, Niall, Rui Zhu, Jun Xu, Duesberg, Georg S., Zhi-Min Liao, Boland, John J., Hongzhou Zhang
Publikováno v:
ACS Nano; 12/24/2019, Vol. 13 Issue 12, p14262-14273, 12p