Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kean T. Khoo"'
Autor:
Amir Abdallah, Stephane Armand, Bram Hoex, Anower Hossain, Yahya Zakaria, Sachin Surve, Parvathala Reddy Narangari, Teng Kho, Jingnan Tong, Kean T. Khoo, Tien T Le, Kean Chern Fong, Keith R. McIntosh, Marco Ernst, Wensheng Liang
Publikováno v:
ACS Applied Materials & Interfaces. 13:36426-36435
Thin SiOx interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiOx layer, often only several atomic layers thick, becomes the interface between the Si and deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eade7890fb1cca91ba9e31f3f10047ce
https://doi.org/10.1021/acsami.1c06765
https://doi.org/10.1021/acsami.1c06765
Autor:
Jingnan, Tong, Tien T, Le, Wensheng, Liang, Md Anower, Hossain, Keith R, McIntosh, Parvathala, Narangari, Stephane, Armand, Teng C, Kho, Kean T, Khoo, Yahya, Zakaria, Amir A, Abdallah, Sachin, Surve, Marco, Ernst, Bram, Hoex, Kean Chern, Fong
Publikováno v:
ACS applied materialsinterfaces. 13(30)
Thin SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::182ffc7fbe6ab73d6588d7c53b15c176
https://pubmed.ncbi.nlm.nih.gov/34308641
https://pubmed.ncbi.nlm.nih.gov/34308641
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 12:1800156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da4dd9997a648eeede9f704f12428dd7
https://doi.org/10.1002/pssr.201800156
https://doi.org/10.1002/pssr.201800156