Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kean Hong Tok"'
Autor:
James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jian Fu Zhang
Publikováno v:
IEEE Access, Vol 11, Pp 127725-127736 (2023)
To predict long term device aging under use bias, models extracted from voltage accelerated tests must be extrapolated into the future. The traditional model uses a power law, to linearly fit the test data on a log-log plot, and then extrapolates agi
Externí odkaz:
https://doaj.org/article/c68a0e685eee498e8537f139468eb84e
Autor:
Mehzabeen Mehedi, Kean Hong Tok, Zengliang Ye, Jian Fu Zhang, Zhigang Ji, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 9, Pp 43551-43561 (2021)
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes circuits vulnerable to nois
Externí odkaz:
https://doaj.org/article/75d8976cbe2746f5ad572d4df86ade03
Autor:
Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 8, Pp 182273-182282 (2020)
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit a
Externí odkaz:
https://doaj.org/article/df7db409461345a9bd6c47ddf91a368f
Autor:
Kean Hong Tok, Mehzabeen Mehedi, Jian Fu Zhang, Zengliang Ye, Zhigang Ji, Weidong Zhang, John Marsland
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5b631f923ee2c41365a27465314f7c
https://doi.org/10.1109/icsict55466.2022.9963221
https://doi.org/10.1109/icsict55466.2022.9963221
Autor:
John Marsland, Zhigang Ji, Kean Hong Tok, Jian Fu Zhang, Weidong Zhang, Zengliang Ye, Mehzabeen Mehedi
Publikováno v:
IEEE Access, Vol 9, Pp 43551-43561 (2021)
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes circuits vulnerable to nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99e18b154fef5022fba44f3b3f52d207
https://doi.org/10.1109/access.2021.3065869
https://doi.org/10.1109/access.2021.3065869
Autor:
M. Duan, Jian Fu Zhang, Zeliang Ye, Zhigang Ji, Weidong Zhang, Mehzabeen Mehedi, Kean Hong Tok
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Defects in MOSFETs generally have adverse effects on device performance: they increase the threshold voltage, reduce the driving current, and in turn, lower the operation speed. Early works focus on the charging and discharging of defects and their i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::371bfa1037d91856bee0cb20b09a353c
https://doi.org/10.1109/icsict49897.2020.9278393
https://doi.org/10.1109/icsict49897.2020.9278393
Autor:
Kean Hong Tok, Weidong Zhang, Mehzabeen Mehedi, Zhigang Ji, Zengliang Ye, John Marsland, Jian Fu Zhang
Publikováno v:
IEEE Access, Vol 8, Pp 182273-182282 (2020)
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2a898487a95c26b4ee24707d31b6637
https://researchonline.ljmu.ac.uk/id/eprint/13797/1/An_Assessment_of_the_Statistical_Distribution_of_Random_Telegraph_Noise_Time_Constants.pdf
https://researchonline.ljmu.ac.uk/id/eprint/13797/1/An_Assessment_of_the_Statistical_Distribution_of_Random_Telegraph_Noise_Time_Constants.pdf
